Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 4.7 kOhms |
| Resistor - Emitter Base(R2) | 47 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 68 @ 5mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| Frequency - Transition | 200 MHz |
| Power - Max | 300 mW |
| Mounting Type | Through Hole |
