FM25H20-DG

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FM25H20-DG

+БОМ

IC FRAM 2MBIT SPI 40MHZ 8TDFN

  • Производителькорпорации Cypress Semiconductor Corp

  • Мфр. Часть #FM25H20-DG

  • Лист данных FM25H20-DG DataSheet

  • Пакет WDFN-8

  • В наличии3298

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Спецификации

Атрибут Ценность
Package Tube
Series F-RAM™
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 2Mb (256K x 8)
MemoryInterface SPI
ClockFrequency 40 MHz
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-WDFN Exposed Pad

Обзор

Description

The FM25H20-DG is a non-volatile ferroelectric RAM (F-RAM) device designed to offer fast read/write speeds, high endurance, and low power consumption. With a storage capacity of 2 kilobits organized as 256 x 8 bytes, it provides reliable data retention without the need for a backup power source. This memory device operates over a wide voltage range, typically from 2.0V to 3.6V, making it versatile for various applications.
The FM25H20-DG features a Serial Peripheral Interface (SPI), ensuring efficient communication with microcontrollers and other digital systems. It supports data transfer rates up to 20 MHz, which facilitates quick data access and reduces latency.
Key advantages of the FM25H20-DG include its virtually unlimited read/write cycles, more than 10^14, and data retention of over 10 years, offering a durable and reliable memory solution. It is commonly used in applications requiring frequent data updates and high endurance, such as industrial automation, medical devices, and metering systems. Its small package size and robust performance make it an excellent choice for embedded system designers.

Equivalent

The FM25H20-DG is a 256-Kbit non-volatile ferroelectric RAM (F-RAM) chip. Equivalent or similar products include:
1. Cypress FM25V20A - a 256-Kbit F-RAM with SPI interface.
2. Ramtron FM25L20B - another 256-Kbit F-RAM with similar specifications.
3. Fujitsu MB85RS2MT - a 256-Kbit SPI F-RAM.
4. Adesto Technologies AT25DN256 - a 256-Kbit EEPROM with SPI interface, although it uses EEPROM technology, not F-RAM.
Ensure compatibility by checking specific electrical and performance specifications.

Features

The FM25H20-DG is a non-volatile FRAM (Ferroelectric Random Access Memory) device that offers several key features:
1. Capacity: It has a memory capacity of 2K x 8 bits, totaling 16 Kb.
2. Non-Volatility: Retains data without power, ensuring data persistence.
3. High Endurance: Supports virtually unlimited read/write cycles, typically over 10 trillion.
4. Fast Write Speed: Allows for rapid data writing without the delays associated with EEPROM or Flash.
5. Low Power Consumption: Efficient power usage, suitable for battery-operated devices.
6. SPI Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, enhancing connectivity options.
7. Wide Voltage Range: Operates effectively across a broad voltage range, from 2.0V to 3.6V.
8. Industrial Temperature Range: Functions reliably within temperatures from -40°C to +85°C, making it suitable for harsh environments.
9. Package Options: Available in an 8-pin SOIC package for easy integration into a variety of applications.
These features make the FM25H20-DG ideal for applications requiring reliable, fast, and energy-efficient data storage.

Pinout

The FM25H20-DG is a non-volatile ferroelectric RAM (F-RAM) chip manufactured by Cypress Semiconductor. It is housed in an 8-pin SOIC package. The pin functions are as follows:
1. CS (Chip Select) - Activates the device when low.
2. SO (Serial Output) - Outputs data from the memory.
3. WP (Write Protect) - Protects the entire memory when low.
4. VSS - Ground reference.
5. SI (Serial Input) - Inputs data into the memory.
6. SCK (Serial Clock) - Provides the clock signal for the serial interface.
7. HOLD - Pauses any serial communication while active low.
8. VDD - Power supply input.
These pins allow for serial communication via the SPI protocol, enabling read and write operations to the memory. The F-RAM technology provides fast writes, high endurance, and non-volatility.

Manufacturer

The FM25H20-DG is manufactured by Cypress Semiconductor, which is a company that specializes in the design and production of semiconductor products. Cypress is known for its expertise in producing a range of electronic components, including memory solutions, microcontrollers, and wireless connectivity devices. The FM25H20-DG is a ferroelectric RAM (F-RAM) product, which is known for its non-volatile memory characteristics, allowing data retention without a continuous power supply. Cypress Semiconductor focuses on providing solutions for automotive, industrial, consumer electronics, and Internet of Things (IoT) applications, among other sectors. In 2020, Cypress Semiconductor was acquired by Infineon Technologies AG, a leading global semiconductor company, further expanding its reach and capabilities in the semiconductor industry.

Application

The FM25H20-DG is a Ferroelectric RAM (F-RAM) chip that is used primarily in applications requiring non-volatile memory with high endurance and fast write speeds. Its key application areas include industrial control systems, data logging, medical devices, automotive electronics, and smart metering. It is particularly useful in situations where frequent data writes and immediate data retention are critical, such as in real-time data capture and storage, power failure data protection, and configuration settings. Its robustness and reliability make it suitable for harsh environments where traditional non-volatile memories might fail.

Package

The FM25H20-DG is a non-volatile ferroelectric RAM (F-RAM) chip produced by Cypress Semiconductor (now part of Infineon Technologies). It comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. This package type is commonly used for surface-mount applications, offering a compact design suitable for various electronic devices.

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