Спецификации
| Атрибут | Ценность |
| Supplier | IXYS |
| Package | Tube |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 150V |
| Current-ContinuousDrain(Id)@25°C | 53A |
| RdsOn(Max)@IdVgs | 20mOhm @ 55A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 8600pF @ 25V |
| Power-Max | 180W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | i4-Pac™-5 |
