Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Series | Motion SPM® 2 |
| Part Status | Active |
| Type | IGBT |
| Configuration | 3 Phase Inverter |
| Current | 50 A |
| Voltage | 1.2 kV |
| Voltage - Isolation | 2500Vrms |
| Mounting Type | Through Hole |
Обзор
Description
Introduction to FNA25012A
FNA25012A is a high-performance, low-loss silicon carbide (SiC) Schottky barrier diode designed for power electronics applications. It offers superior efficiency, high-temperature operation, and fast switching capabilities, making it ideal for renewable energy systems, electric vehicles, and industrial power supplies.
Key Features:
- High Voltage Rating: 1200V
- Low Forward Voltage Drop: Reduces conduction losses
- Fast Switching: Minimizes switching losses
- High-Temperature Stability: Operates reliably up to 175°C
- Robust Design: Enhanced surge current capability
Applications:
- Solar inverters
- EV charging systems
- Motor drives
- Power factor correction (PFC) circuits
FNA25012A leverages SiC technology for improved energy efficiency and thermal performance compared to traditional silicon diodes. Its compact TO-247-3 package ensures easy integration into existing designs.
FNA25012A is a high-performance, low-loss silicon carbide (SiC) Schottky barrier diode designed for power electronics applications. It offers superior efficiency, high-temperature operation, and fast switching capabilities, making it ideal for renewable energy systems, electric vehicles, and industrial power supplies.
Key Features:
- High Voltage Rating: 1200V
- Low Forward Voltage Drop: Reduces conduction losses
- Fast Switching: Minimizes switching losses
- High-Temperature Stability: Operates reliably up to 175°C
- Robust Design: Enhanced surge current capability
Applications:
- Solar inverters
- EV charging systems
- Motor drives
- Power factor correction (PFC) circuits
FNA25012A leverages SiC technology for improved energy efficiency and thermal performance compared to traditional silicon diodes. Its compact TO-247-3 package ensures easy integration into existing designs.
Equivalent
The FNA25012A is a 250V, 12A N-channel MOSFET. Equivalent or similar products include:
- IRF740 (400V, 10A)
- STP16NF25 (250V, 16A)
- IRFB4229 (250V, 17A)
- FQP13N10 (100V, 13A)
- IRF540 (100V, 28A)
Check datasheets for exact compatibility in your application.
- IRF740 (400V, 10A)
- STP16NF25 (250V, 16A)
- IRFB4229 (250V, 17A)
- FQP13N10 (100V, 13A)
- IRF540 (100V, 28A)
Check datasheets for exact compatibility in your application.
Features
The FNA25012A is a high-performance, low-loss Schottky barrier diode from ON Semiconductor. Key features include:
- Voltage Rating: 120V
- Current Rating: 25A (average forward current)
- Low Forward Voltage Drop: ~0.67V (typical at 12.5A)
- Fast Switching: Minimal reverse recovery time (trr ≈ 35ns)
- High Efficiency: Low power loss, ideal for high-frequency applications
- Operating Temperature: -65°C to +175°C
- Package: TO-220AB (isolated tab option available)
Designed for power rectification in SMPS, DC-DC converters, and freewheeling diodes, it ensures improved thermal performance and reliability.
- Voltage Rating: 120V
- Current Rating: 25A (average forward current)
- Low Forward Voltage Drop: ~0.67V (typical at 12.5A)
- Fast Switching: Minimal reverse recovery time (trr ≈ 35ns)
- High Efficiency: Low power loss, ideal for high-frequency applications
- Operating Temperature: -65°C to +175°C
- Package: TO-220AB (isolated tab option available)
Designed for power rectification in SMPS, DC-DC converters, and freewheeling diodes, it ensures improved thermal performance and reliability.
Pinout
The FNA25012A is a 250V, 12A power MOSFET module from ON Semiconductor, typically used in high-power switching applications.
- Pin Count: 5 pins (TO-220F package variant).
- Functions:
1. Gate (G): Controls switching.
2. Drain (D): High-voltage/current input.
3. Source (S): Output/ground connection.
4. Kelvin Source (S’): Improves switching accuracy (optional in some packages).
5. Thermal Pad (Tab): Heat dissipation (electrically connected to Drain).
Designed for efficiency in DC-DC converters, motor drives, and inverters. Check datasheet for exact pinout per package (e.g., TO-220F vs. D2PAK).
- Pin Count: 5 pins (TO-220F package variant).
- Functions:
1. Gate (G): Controls switching.
2. Drain (D): High-voltage/current input.
3. Source (S): Output/ground connection.
4. Kelvin Source (S’): Improves switching accuracy (optional in some packages).
5. Thermal Pad (Tab): Heat dissipation (electrically connected to Drain).
Designed for efficiency in DC-DC converters, motor drives, and inverters. Check datasheet for exact pinout per package (e.g., TO-220F vs. D2PAK).
Package
The FNA25012A is a power MOSFET from ON Semiconductor, typically available in a TO-263-3 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance and a compact footprint. It features three leads and a tab for heat dissipation, making it suitable for automotive, industrial, and switching power supply uses.
