FP75R12KT3

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FP75R12KT3

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  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #FP75R12KT3

  • Лист данных FP75R12KT3 DataSheet

  • В наличии3992

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Спецификации

Атрибут Ценность
Mounting Style Screw Mount
Package / Case Econo 3
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Packaging Tray
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
REACH - SVHC Details
Configuration 3-Phase Inverter
Series Trenchstop IGBT3 - T3
Height 17 mm
Length 122 mm
Product IGBT Silicon Modules
Factory Pack Quantity:Factory Pack Quantity 10
Width 62 mm
Part # Aliases SP000100443 FP75R12KT3BOSA1
Unit Weight 10.582189 oz
Collector- Emitter Voltage VCEO Max 1.2 kV
Continuous Collector Current at 25 C 105 A
Maximum Gate Emitter Voltage 20 V
Tradename TRENCHSTOP EconoPIM
Collector-Emitter Saturation Voltage 1.7 V
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 355 W

Обзор

Description

The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance applications in power electronics. This device is part of the FP series from Fairchild Semiconductor, now part of ON Semiconductor. It features a reverse blocking diode and offers low conduction and switching losses, making it suitable for various applications like motor drives, power supplies, and renewable energy systems.
Key specifications include a collector-emitter voltage (Vce) rating of 1200V and a maximum continuous collector current (Ic) of 75A. Its operational efficiency and thermal performance are enhanced by a robust packaging design that allows for effective heat dissipation.
The FP75R12KT3's versatility and reliability make it a popular choice in industrial and commercial settings, where efficiency and durability are critical.
Overall, this IGBT module is designed to facilitate efficient power management and control, contributing to the advancement of modern power electronic systems.

Equivalent

Equivalent products to the FP75R12KT3 IGBT module include the following models:
1. FGA75R12KS3 (Fairchild)
2. IR75R12K (International Rectifier)
3. SKM75GB123D (Semikron)
4. CM75DY-12H (Mitsubishi)
Always verify specifications, performance, and application suitability before replacing components.

Features

The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) optimized for high-performance applications. Key features include:
1. Voltage Rating: It typically has a collector-emitter voltage (VCE) rating of 1200 V, making it suitable for high-voltage applications.

2. Current Rating: With a continuous collector current (IC) of approximately 75 A, it can handle significant load demands.
3. Low Switching Losses: Designed for efficient operation, it minimizes switching losses, enhancing overall system efficiency.
4. High Thermal Stability: The device has a low thermal resistance, allowing for better heat dissipation and stable performance under varying conditions.
5. Fast Switching Speeds: It facilitates rapid switching, making it ideal for applications in inverters, motor drives, and power supplies.
6. Robust Design: The construction ensures high reliability and durability in demanding environments.
These features make the FP75R12KT3 a preferred choice for industrial applications requiring efficient power control.

Pinout

The FP75R12KT3 is an IGBT module from Infineon Technologies with a total of 6 pins. This module typically features the following pin configuration:
1. U (Collector) - Connected to the positive DC supply.
2. V (Emitter) - Connected to the load.
3. G (Gate) - Used for driving the IGBT to turn it on and off.
4. E (Emitter) - This pin is also the emitter for the IGBT.
5. C (Collector) - Another collector connection for the IGBT.
6. SS (Snubber) - Used for snubber capacitors or additional circuit elements.
The FP75R12KT3 is designed for high-performance applications in industrial drives, renewable energy systems, and motor control, providing efficient switching capabilities and thermal performance.

Manufacturer

The FP75R12KT3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Founded in 1999, Infineon specializes in designing and producing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and various integrated circuits. The company is a global leader in the semiconductor industry, focusing on applications in automotive, industrial power control, and security technologies. Infineon is known for its innovation and commitment to sustainability, providing solutions that enhance energy efficiency and reduce environmental impact. The FP75R12KT3 is a specific model of an IGBT (Insulated Gate Bipolar Transistor), commonly used in power electronics applications such as inverters, motor drives, and renewable energy systems.

Application

The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) widely used in various applications, including:
1. Motor Drives: For variable speed drives in industrial and commercial motors.
2. Renewable Energy: Inverters for solar power systems and wind energy converters.
3. Power Conversion: In applications like uninterruptible power supplies (UPS) and DC-DC converters.
4. Welding Equipment: For controlling the power in arc welding processes.
5. HVAC Systems: In variable frequency drives for heating, ventilation, and air conditioning systems.
Its high efficiency and fast switching capabilities make it suitable for these diverse applications.

Package

The FP75R12KT3 is a power transistor that typically comes in a DPAK (TO-252) package type. This package is known for its robust performance and is commonly used in power applications.

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