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FQA24N60
+БОМMOSFET N-CH 600V 23.5A TO3PN
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ПроизводительОнсеми
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Мфр. Часть #FQA24N60
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Лист данных FQA24N60 DataSheet
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Пакет TO-3PN-3
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В наличии1579
365 Дни гарантии качества
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 23.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 240mOhm @ 11.8A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 145 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 5500 pF @ 25 V |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
Обзор
Description
Equivalent
Features
1. N-Channel MOSFET: It is an N-channel enhancement-mode MOSFET.
2. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of 600V and a continuous drain current (I_D) capability of 24A.
3. R_DS(on): The on-resistance is relatively low, helping to reduce conduction losses.
4. High-Speed Switching: Designed for fast switching, which is beneficial for high-frequency applications.
5. Low Gate Charge: This feature contributes to lower driving power requirements and higher efficiency.
6. High Avalanche Energy Capability: Provides robustness under transient conditions.
7. Applications: Suitable for use in power supplies, motor control, converters, and other high-efficiency power management applications.
8. Package: Typically available in a TO-3P package offering good thermal performance.
These features make the FQA24N60 ideal for use in demanding environments where efficiency and reliability are critical.
Pinout
1. Gate (G): This pin is used to turn the MOSFET on or off by applying a voltage.
2. Drain (D): The drain is where the load current enters the MOSFET. It is connected to the higher voltage side of the circuit.
3. Source (S): The source is where the load current exits the MOSFET, typically connected to the ground or lower voltage side of the circuit.
The FQA24N60 is designed for high-voltage, high-speed power switching applications. It has a maximum drain-source voltage (V_ds) of 600V and can handle a continuous drain current of up to 24A. This MOSFET is commonly used in power supplies, motor control, and other applications requiring efficient switching and power management.
Manufacturer
Application
1. Switching Power Supplies: Used for efficient power conversion and regulation.
2. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
3. Inverters: Utilized in inverter circuits for solar power systems and uninterruptible power supplies.
4. Lighting: Employed in high-intensity LED lighting systems.
5. Audio Amplifiers: Used in high-power audio amplification systems for better sound quality.
6. Telecommunications: Applied in telecom power systems for efficient power management.
These applications leverage the MOSFET's fast switching speed and high efficiency.