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FQA40N25
+БОМMOSFET N-CH 250V 40A TO3PN
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ПроизводительОнсеми
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Мфр. Часть #FQA40N25
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Лист данных FQA40N25 DataSheet
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Пакет TO-3PN-3
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В наличии6815
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4000 pF @ 25 V |
| Power Dissipation (Max) | 280W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
Обзор
Description
Key specifications of the FQA40N25 include:
1. Drain-Source Voltage (V_DS): Typically rated at 250V, indicating the maximum voltage it can handle between the drain and source terminals.
2. Continuous Drain Current (I_D): Can handle up to 40A of current, suitable for high-power applications.
3. R_DS(on): Low on-resistance, typically around 0.07 ohms, reducing power loss during operation.
4. Package Type: Often available in a TO-3P package, which is designed for efficient heat dissipation.
The FQA40N25 is favored in applications requiring efficient power handling and fast switching due to its robust construction and reliable performance characteristics.
Equivalent
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 250V and a continuous drain current (I_D) of 40A, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET offers low on-state resistance (R_DS(on)), which minimizes power loss and enhances efficiency when the device is in the fully "on" state.
3. Enhanced Switching Performance: Designed for fast switching speeds, the FQA40N25 helps improve the efficiency and performance of power circuits by reducing switching losses.
4. Thermal Performance: With an effective thermal management design, it can handle high power dissipation, supported by a robust package that aids in heat dissipation.
5. Applications: This MOSFET is ideal for use in applications like power supplies, motor drives, and other systems requiring efficient power conversion.
6. Package Type: Typically available in TO-3P, which offers mechanical stability and thermal efficiency.
These features make the FQA40N25 a reliable component for various electronic applications requiring efficient power handling and fast switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, the MOSFET can be turned on or off, allowing current to flow between the drain and source.
2. Drain (D): The drain pin is where the load is connected. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the terminal through which the current exits the MOSFET. In most applications, the source is connected to ground.
These three pins work together to allow the FQA40N25 to function as a switch in electronic circuits. The device is known for its high efficiency and ability to handle significant power levels.
Manufacturer
Application
1. Power Supply Units: Used in switch-mode power supplies for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. DC-DC Converters: Utilized in voltage regulation and conversion circuits.
4. Lighting Systems: Employed in LED drivers for efficient lighting solutions.
5. Battery Management: Used in battery protection and charging circuits.
6. Audio Amplifiers: Facilitates efficient amplification in audio equipment.
7. Renewable Energy Systems: Applied in solar inverters and other renewable energy applications for power management.
These applications leverage the FQA40N25's high voltage and current handling capabilities, along with its efficiency in switching operations.