Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain(Id) @ 25°C | 5.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.3Ohm @ 2.7A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1550 pF @ 25 V |
| Power Dissipation (Max) | 3.13W (Ta), 158W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Обзор
Description
The FQB5N90TM is an N-channel MOSFET from ON Semiconductor, designed for high-voltage applications. Key features include:
- Voltage Rating: 900V, suitable for power switching.
- Current Rating: 5A (continuous drain current).
- Low On-Resistance (RDS(on)): Reduces conduction losses.
- Fast Switching: Optimized for efficiency in power supplies and inverters.
- Package: TO-220F (isolated tab), aiding thermal management.
Commonly used in AC-DC converters, LED drivers, and motor controls, it balances performance and reliability. Always refer to the datasheet for detailed specifications and application guidelines.
- Voltage Rating: 900V, suitable for power switching.
- Current Rating: 5A (continuous drain current).
- Low On-Resistance (RDS(on)): Reduces conduction losses.
- Fast Switching: Optimized for efficiency in power supplies and inverters.
- Package: TO-220F (isolated tab), aiding thermal management.
Commonly used in AC-DC converters, LED drivers, and motor controls, it balances performance and reliability. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
Equivalent products to the FQB5N90TM (5A, 900V MOSFET) include:
- STP5NK90Z (STMicroelectronics)
- IRFBE30 (Infineon)
- FQPF5N90C (Fairchild/ON Semi)
- 5N90 (various brands like Vishay)
These are similar N-channel MOSFETs with comparable voltage/current ratings. Verify datasheets for exact specs.
- STP5NK90Z (STMicroelectronics)
- IRFBE30 (Infineon)
- FQPF5N90C (Fairchild/ON Semi)
- 5N90 (various brands like Vishay)
These are similar N-channel MOSFETs with comparable voltage/current ratings. Verify datasheets for exact specs.
Features
The FQB5N90TM is a N-channel MOSFET with the following key features:
- Voltage Rating: 900V
- Current Rating: 5A (continuous)
- Low On-Resistance (RDS(on)): 1.5Ω (max) @ VGS = 10V
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
- Package: TO-220F (isolated tab for easier mounting)
- Low Gate Charge (Qg): Improves switching performance
Ideal for switching power supplies, LED drivers, and motor control due to its high voltage capability and efficiency.
- Voltage Rating: 900V
- Current Rating: 5A (continuous)
- Low On-Resistance (RDS(on)): 1.5Ω (max) @ VGS = 10V
- Fast Switching Speed: Optimized for high-efficiency applications
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
- Package: TO-220F (isolated tab for easier mounting)
- Low Gate Charge (Qg): Improves switching performance
Ideal for switching power supplies, LED drivers, and motor control due to its high voltage capability and efficiency.
Pinout
The FQB5N90TM is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-220AB package: Gate, Drain, Source)
- Function: Power switching in applications like power supplies, motor control, and inverters.
- Voltage Rating: 900V (Drain-Source)
- Current Rating: 5A (Drain current at 25°C)
- Low On-Resistance (RDS(on)): ~1.35Ω (typ.)
Designed for high-voltage, high-efficiency switching, it features fast switching speeds and low gate charge.
- Pin Count: 3 (TO-220AB package: Gate, Drain, Source)
- Function: Power switching in applications like power supplies, motor control, and inverters.
- Voltage Rating: 900V (Drain-Source)
- Current Rating: 5A (Drain current at 25°C)
- Low On-Resistance (RDS(on)): ~1.35Ω (typ.)
Designed for high-voltage, high-efficiency switching, it features fast switching speeds and low gate charge.
