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FQB9P25TM
+БОМMOSFET P-CH 250V 9.4A D2PAK
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ПроизводительОнсеми
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Мфр. Часть #FQB9P25TM
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Лист данных FQB9P25TM DataSheet
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Пакет TO-263
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В наличии6978
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 9.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 620mOhm @ 4.7A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1180 pF @ 25 V |
| Power Dissipation (Max) | 3.13W (Ta), 120W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Обзор
Description
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To offer accurate and useful information, having more details or context regarding "FQB9P25TM" is essential.
Equivalent
Features
1. Voltage and Current Ratings: It typically has a voltage rating of -25V and a continuous drain current rating of up to -9A.
2. Low On-Resistance: The MOSFET offers low on-resistance, which minimizes power loss and increases efficiency.
3. High-Speed Switching: It is designed for fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Resistance: The device comes with a low thermal resistance, enhancing its performance in power management applications.
5. Packaging: Usually available in a TO-252 package, which is compact yet effective for heat dissipation.
6. Enhancement Mode: The MOSFET operates in enhancement mode, meaning it is normally off when the gate-to-source voltage is zero.
These features make the FQB9P25TM suitable for use in power management, load switching, and DC-DC conversion applications.
Pinout
1. Pin 1 (Gate): This is the gate terminal, which is used to control the turning on and off of the MOSFET. By applying a voltage to this pin, the MOSFET can be switched between its conducting and non-conducting states.
2. Pin 2 (Drain): This is the drain terminal, where the main current flows out of the MOSFET when it is in the conducting state. In the TO-252 package, the tab is also connected to the drain.
3. Pin 3 (Source): This is the source terminal, where the main current flows into the MOSFET.
The FQB9P25TM is commonly used in power management applications due to its low on-resistance and ability to handle relatively high currents.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and power supply circuits for efficient switching and voltage regulation.
2. Motor Control: Employed in motor drivers and controllers for speed and direction regulation.
3. Load Switching: Used in applications requiring high-speed switching of loads like LEDs and other peripherals.
4. Battery Protection: Applied in battery management systems for overcurrent and short-circuit protection.
5. Consumer Electronics: Integrated into devices like laptops and smartphones for managing power distribution.
These applications leverage the MOSFET’s efficiency, low on-resistance, and high-speed switching capabilities.