FQD11P06TM

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FQD11P06TM

+БОМ

MOSFET P-CH 60V 9.4A DPAK

  • ПроизводительОнсеми

  • Мфр. Часть #FQD11P06TM

  • Лист данных FQD11P06TM DataSheet

  • Пакет DPAK-3

  • В наличии2908

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 9.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 185mOhm @ 4.7A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 17 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 550 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Обзор

Description

"FQD11P06TM" appears to be a model number, likely for a semiconductor component such as a MOSFET or power transistor. While exact details may vary by manufacturer, similar alphanumeric codes often denote specifications like voltage rating (e.g., 60V), current capacity (e.g., 11A), package type (e.g., TO-252/DPAK), and switching characteristics.
For precise information, consult the datasheet from the manufacturer (e.g., Fairchild, ON Semiconductor, or other electronics suppliers). Key parameters typically include:
- Type: N-channel/P-channel MOSFET.
- Voltage/Current Ratings: E.g., 60V, 11A.
- Applications: Power switching, motor control, or voltage regulation.
Always verify part specifics for compatibility in your circuit design.

Equivalent

Equivalent products to the FQD11P06TM (P-channel MOSFET, 60V, 11A) include:
- IRF9Z34N (P-channel, 55V, 12A)
- FQP27P06 (P-channel, 60V, 27A)
- STP55P06FP (P-channel, 60V, 55A)
- IRLML6401 (P-channel, 60V, 4.3A, SMD)
Check datasheets for exact specs and pin compatibility.

Features

The FQD11P06TM is a P-channel MOSFET with the following key features:
- Voltage Rating: -60V (Drain-Source, VDSS)
- Current Rating: -11A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (max) at VGS = -10V
- Fast Switching: Low gate charge (Qg) and low capacitance for efficient performance
- Logic-Level Gate Drive: Enhanced operation at VGS = -10V
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching
Compact and efficient, it’s suitable for medium-power switching tasks.

Pinout

The FQD11P06TM is a P-channel MOSFET in a TO-252 (DPAK) package with 3 pins (Gate, Drain, Source).
Key Functions:
- Gate (Pin 1): Controls the MOSFET switching.
- Drain (Pin 2): Connects to the load (negative side for P-channel).
- Source (Pin 3): Tied to the supply voltage (typically positive).
Specs:
- Voltage: -60V (Drain-Source).
- Current: -11A (continuous).
- Low RDS(on): ~0.08Ω (max).
Used in power switching, motor control, and DC-DC converters.

Package

The FQD11P06TM is a P-channel MOSFET in a TO-252 (DPAK) surface-mount package. It features a compact design with a tab for heat dissipation, making it suitable for power applications. Key specs include -60V drain-source voltage, -11A continuous drain current, and low on-resistance. Commonly used in power management, switching circuits, and DC-DC converters.

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