FQD6N40CTM

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FQD6N40CTM

+БОМ

MOSFET N-CH 400V 4.5A DPAK

  • ПроизводительОнсеми

  • Мфр. Часть #FQD6N40CTM

  • Пакет DPAK-3

  • В наличии2203

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain(Id) @ 25°C 4.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1Ohm @ 2.25A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 625 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Обзор

Description

The FQD6N40CTM is a N-channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications.
### Key Features:
- Voltage Rating: 400V
- Current Rating: 6A (continuous)
- Low On-Resistance (RDS(on)): 1.2Ω (typ.)
- Fast Switching Speed
- TO-252 (DPAK) Package (compact, surface-mount design)
### Applications:
- Switching power supplies
- DC-DC converters
- Motor control
- LED drivers
### Advantages:
- Low gate charge for efficient switching.
- Avalanche energy rated for robustness.
- Pb-free and RoHS compliant.
Ideal for medium-power applications requiring high voltage handling and compact packaging. For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FQD6N40CTM (40V, 6A MOSFET) include:
- IRLML6402 (P-channel, 40V, 3.7A)
- SI2301DS (P-channel, 40V, 2.3A)
- AO3401 (P-channel, 40V, 4A)
- DMG2305UX (P-channel, 40V, 5.2A)
Check datasheets for exact specs. For higher current, consider FQD7P20TM (20V, 7A).

Features

The FQD6N40CTM is a 40V, 6A N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)): Typically 28mΩ at VGS=10V, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency power applications.
- Low Gate Charge (Qg): Enhances switching performance.
- Avalanche Energy Rated: Improves reliability in inductive load conditions.
- Compact Package: TO-252 (DPAK) for space-saving designs.
- Logic-Level Compatible: Can be driven by 3V-5V gate signals.
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.

Pinout

The FQD6N40CTM is a N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- Voltage Rating: 400V
- Current Rating: 6A
- Low On-Resistance (RDS(on)): ~1.2Ω (typ.)
- Fast Switching Speed
Commonly used in power switching applications like DC-DC converters, motor drives, and power supplies.

Package

The FQD6N40CTM is a 400V, 6A N-channel MOSFET in a TO-252 (DPAK) surface-mount package. It features low on-resistance and fast switching, suitable for power management applications. The package is compact, with a thermal pad for efficient heat dissipation.

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