Спецификации
| Атрибут | Ценность |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
| Capacitance @ Vr F | 520pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-2 |
