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GD5F1GQ5UEYIGR
+БОМIC FLASH 1GBIT SPI/QUAD
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ПроизводительКомпания GigaDevice Semiconductor (HK) Limited
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Мфр. Часть #GD5F1GQ5UEYIGR
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Лист данных GD5F1GQ5UEYIGR DataSheet
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Спецификации
| Атрибут | Ценность |
| Series | GD5F |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Memory Size | 1Gbit |
| Memory Organization | 256M x 4 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 133 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Base Product Number | GD5F1GQ5 |
| Technology | FLASH - NAND (SLC) |
| Write Cycle Time - Word, Page | 600µs |
| Supplier Device Package | 8-WSON (6x8) |
| Access Time | 7 ns |
Обзор
Description
Equivalent
Pinout
1. CE# (Chip Enable): Activates the chip.
2. RE# (Read Enable): Controls data output during read operations.
3. WE# (Write Enable): Manages data input and command latching.
4. ALE (Address Latch Enable): Latches address information.
5. CLE (Command Latch Enable): Latches command bits.
6. WP# (Write Protect): Protects the device from unintended writes.
7. I/O (Input/Output): Bidirectional data pins for data transfer.
8. VCC (Power Supply): Provides the necessary power for the chip.
9. VSS (Ground): Ground reference for the power supply.
These pins collectively manage data storage operations, including reading, writing, and erasing data within the NAND Flash memory. The device is typically used in various consumer electronics and industrial applications for data storage solutions.