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HMC1118LP3DE
+БОМIC RF SWITCH SPDT 13GHZ 16LFCSP
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ПроизводительКомпания Analog Devices Inc.
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Мфр. Часть #HMC1118LP3DE
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Лист данных HMC1118LP3DE DataSheet
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В наличии2348
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Strip |
| ProductStatus | Active |
| RFType | VSAT |
| Topology | Absorptive |
| Circuit | SPDT |
| FrequencyRange | 9kHz ~ 13GHz |
| Isolation | 50dB |
| InsertionLoss | 2dB |
| TestFrequency | 3GHz, 13GHz |
| P1dB | 37dBm |
| IIP3 | 62dBm |
| Impedance | 50Ohm |
| Voltage-Supply | 3V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C |
| Package/Case | 16-VFQFN Exposed Pad, CSP |
Обзор
Description
Key features of the HMC1118LP3DE include low insertion loss, high isolation, and fast switching speed, which enhance the performance of RF systems. It also offers excellent linearity and power handling capabilities, supporting high RF input power levels. The switch is housed in a compact, 3x3 mm QFN package, which is surface-mountable, facilitating easy integration into circuit designs.
Moreover, it is controlled via a single positive control voltage, simplifying the control interface. The HMC1118LP3DE is well-suited for applications in wireless infrastructure, test and measurement, and other RF front-end systems.
Equivalent
1. Analog Devices ADRF5020 or ADRF5021
2. Mini-Circuits ZFSWA2-63DR+
3. Qorvo TQP4M9071
4. Peregrine Semiconductor PE42542
These alternatives might have similar performance specifications, but always verify specific requirements like frequency range, power handling, and insertion loss before substituting.
Features
1. Frequency Range: Operates from DC to 13 GHz, making it suitable for a wide variety of applications.
2. Low Insertion Loss: Offers low insertion loss typically around 0.8 dB, ensuring minimal signal degradation.
3. High Isolation: Provides high isolation typically around 50 dB, which is critical for reducing interference between the switch ports.
4. Power Handling: Capable of handling input power levels up to +27 dBm, making it robust for various power applications.
5. Fast Switching Speed: Features fast switching times, typically around 35 ns, allowing for quick transitions between states.
6. Control Voltage: Operates with a single positive control voltage, simplifying the control interface.
7. Compact Package: Comes in a 3x3 mm LFCSP package, providing a compact solution for space-constrained designs.
8. RoHS Compliant: Meets RoHS standards, ensuring environmentally friendly design and manufacturing practices.
These features make the HMC1118LP3DE an excellent choice for wireless infrastructure, test equipment, and other high-frequency applications.
Pinout
The pin configuration is as follows:
1. Vdd: Supply voltage
2. GND: Ground
3. RFC: Common RF port
4. RF1: RF port 1
5. RF2: RF port 2
6. Vctl: Control voltage
7. NC/EPAD: No connection / Exposed Pad (for heat dissipation)
The remaining pins are typically no-connect (NC) or ground (GND). The control voltage (Vctl) toggles the switch between the two RF paths (RF1 and RF2). The device is known for its excellent performance in terms of insertion loss, isolation, and power handling, making it suitable for various RF and microwave applications.
For specific technical details like exact pin layout and electrical specifications, referring to the manufacturer's datasheet is recommended.
Manufacturer
Application
1. Wireless Infrastructure: Used in base stations and other communication infrastructure for signal routing.
2. Test and Measurement Equipment: Provides controlled signal switching in test setups.
3. Aerospace and Defense: Used in radar and communication systems for signal control.
4. Mobile Devices and Communication Systems: Enhances connectivity and signal management.
5. IoT Systems: Facilitates efficient communication in IoT networks by managing signal paths.
These applications benefit from the switch's low insertion loss, high isolation, and wide frequency range.