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HMC384LP4ETR
+БОМIC RF AMP 2.05GHZ-2.25GHZ 24QFN
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ПроизводительКомпания Analog Devices Inc.
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Мфр. Часть #HMC384LP4ETR
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Лист данных HMC384LP4ETR DataSheet
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Пакет 24-VFQFN Exposed Pad
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В наличии324
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Analog Devices Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| Frequency | 2.05GHz ~ 2.25GHz |
| Voltage-Supply | 3V |
| Current-Supply | 35mA |
| TestFrequency | 2.2GHz |
| MountingType | Surface Mount |
| Package/Case | 24-VFQFN Exposed Pad |
Обзор
Description
Key features of the HMC384LP4ETR include a low noise figure, typically around 2 dB, and a high third-order intercept point (IP3), providing an excellent balance of noise performance and linearity. It also offers a good gain flatness across its operating range. The amplifier is internally matched to 50 ohms, simplifying the design process by reducing the need for external matching components. This LNA is particularly well-suited for applications where space and power efficiency are critical. It is part of Analog Devices' portfolio, which acquired Hittite Microwave Corporation, the original manufacturer.
Equivalent
Features
1. Frequency Range: Operates efficiently from 3.5 GHz to 8.0 GHz, making it suitable for various communication systems.
2. Low Noise Figure: Offers a low noise figure of approximately 2 dB, enhancing signal clarity and performance.
3. High Gain: Provides a typical gain of 19 dB, improving signal strength significantly.
4. Output Power: Delivers a P1dB of 19 dBm, indicating strong output power capabilities.
5. Input/Output: It is internally matched to 50 Ohms, simplifying the integration into existing systems.
6. Power Supply: Requires a supply voltage of 5V, with a typical current consumption of 75 mA.
7. Package: Comes in a compact 4x4 mm QFN package, facilitating easy implementation in space-constrained designs.
These characteristics make the HMC384LP4ETR ideal for applications in satellite communications, radar systems, and other RF communication devices.
Pinout
Key functions of the HMC384LP4ETR include:
1. Low Noise Amplification: It offers a low noise figure, which makes it suitable for sensitive receiver applications, improving the overall performance of the RF front-end.
2. Wideband Operation: The amplifier operates over a wide frequency range, making it versatile for various applications.
3. High Gain and Linearity: Provides high gain and excellent output power, which is critical for maintaining signal integrity and strength in communication systems.
4. Internally Matched: The device is internally matched to 50 ohms, simplifying the design process and reducing the need for external matching components.
These features make the HMC384LP4ETR an ideal choice for designers looking to improve the performance of RF front-end systems in demanding applications.
Manufacturer
Application
1. Wireless Infrastructure: Enhancing signal strength in mobile base stations and repeaters.
2. Test and Measurement Equipment: Providing amplification for signal testing and analysis.
3. Microwave Radio Systems: Used in both point-to-point and point-to-multipoint communications.
4. Military and Aerospace: Suitable for radar and communication systems due to its robust performance.
5. Satellite Communications: Enhancing uplink and downlink signals.
These applications leverage the amplifier's ability to maintain performance across a range of frequencies, from DC to GHz levels.