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HMC452ST89E
+БОМIC RF AMP GP 400MHZ-2.2GHZ
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ПроизводительКомпания Analog Devices Inc.
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Мфр. Часть #HMC452ST89E
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Лист данных HMC452ST89E DataSheet
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Пакет TO-243AA
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В наличии48
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Analog Devices Inc. |
| Package | Strip |
| ProductStatus | Active |
| Frequency | 400MHz ~ 2.2GHz |
| P1dB | 31.5dBm |
| Gain | 9dB |
| NoiseFigure | 6.5dB |
| RFType | General Purpose |
| Voltage-Supply | 5V |
| Current-Supply | 510mA |
| TestFrequency | 2.1GHz |
| MountingType | Surface Mount |
| Package/Case | TO-243AA |
Обзор
Description
Key features of the HMC452ST89E include a gain of around 20 dB, a high output power of up to 28 dBm, and excellent thermal performance due to its advanced design. The amplifier is housed in a leadless surface-mount package, which not only minimizes parasitic inductance but also simplifies integration into compact layouts.
The device operates with a single positive voltage supply, simplifying biasing requirements and reducing the need for additional external components. Its robust performance, combined with a wide dynamic range, makes the HMC452ST89E a reliable choice for engineers looking to enhance RF signal amplification in their designs.
Equivalent
1. Analog Devices HMC489ST89E
2. Qorvo RFPA5200
3. Mini-Circuits PHA-1+
It's important to verify each alternative against the specific parameters required for your application, as specifications can vary.
Features
1. High Output Power: The amplifier delivers an output power of up to 32 dBm.
2. High Gain: It provides a typical gain of 24 dB, which is suitable for boosting weak signals in communication systems.
3. Efficiency: The device offers high power-added efficiency (PAE) of up to 60%, which helps reduce power consumption.
4. Input/Output Matched: The amplifier is internally matched to 50 ohms, simplifying integration into RF designs.
5. Single Supply Voltage: It operates on a single +5V supply, making it easy to incorporate into existing systems.
6. Temperature Range: The HMC452ST89E functions over a wide temperature range from -40°C to +85°C.
7. Package: It is available in a compact SOT89 package, suitable for space-constrained applications.
Overall, the HMC452ST89E is ideal for cellular, GSM, and other wireless communication applications due to its robust performance and ease of use.
Pinout
1. Pin 1 (RF Input): This is the RF input pin where the signal to be amplified is fed into the amplifier.
2. Pin 2 (Ground): This pin is usually connected to the ground. It provides a return path for the DC biasing and RF signal.
3. Pin 3 (RF Output/BIAS): This is the RF output pin, from which the amplified signal is taken. It also serves as the connection for the DC biasing voltage.
The HMC452ST89E is known for its high output power, and gain, making it suitable for use in point-to-point radio, and other wireless communication systems.
Manufacturer
Application
1. Wireless Infrastructure: Used in amplifiers for base stations and repeaters.
2. Point-to-Point Radios: Suitable for wireless communication links and backhaul networks.
3. Military and Aerospace: Applied in communication systems, radar, and electronic warfare.
4. Microwave Radios: Ideal for use in both commercial and military microwave radio systems.
5. Broadband Applications: Supports broadband systems due to its wide frequency range.
Its high gain, output power, and efficiency make it suitable for these demanding RF environments.