HMC998

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HMC998

+БОМ

IC AMP GP 100MHZ-22GHZ DIE 1=2PC

  • ПроизводительКомпания Analog Devices Inc.

  • Мфр. Часть #HMC998

  • Лист данных HMC998 DataSheet

  • Пакет Die

  • В наличии3736

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Supplier Analog Devices Inc.
Package Tray
ProductStatus Obsolete
Frequency 100MHz ~ 22GHz
P1dB 31.5dBm
Gain 12.5dB
NoiseFigure 4dB
RFType General Purpose
Voltage-Supply 15V
Current-Supply 500mA
MountingType Surface Mount
Package/Case Die

Обзор

Description

The HMC998 is a radio frequency (RF) amplifier designed for high-linearity applications. It is commonly used in RF and microwave systems to amplify weak signals while minimizing distortion. The device operates over a broad frequency range, which makes it versatile for various communication systems, including wireless infrastructure, point-to-point radios, and radar applications.
One of the key features of the HMC998 is its high power output, allowing for strong signal transmission. It typically offers a high gain, making it effective for applications requiring significant signal amplification. Additionally, the HMC998 is designed with excellent thermal performance, which helps maintain its reliability and efficiency even under demanding conditions.
The amplifier is usually packaged in a compact and robust form, allowing for easy integration into circuit designs. It also includes features such as gain control and biasing flexibility, which provide engineers with additional control over the performance parameters. Overall, the HMC998 is valued for its balance of performance, efficiency, and versatility in RF and microwave applications.

Equivalent

The HMC998 is a GaAs MMIC power amplifier. Equivalent products from other manufacturers include:
1. Qorvo TGA2611-SM - A high power amplifier for similar frequency ranges.
2. Analog Devices HMC7891 - Another GaAs MMIC power amplifier with comparable specifications.
3. Mini-Circuits ZVA-183G+ - Offers similar performance for RF applications.
4. MACOM MAAP-011232 - A GaAs power amplifier suitable for similar applications.
Ensure to compare specific parameters like frequency range, gain, and power output for compatibility.

Features

The HMC998 is a MMIC (Monolithic Microwave Integrated Circuit) power amplifier designed for RF and microwave applications. Key features include:
1. Frequency Range: The amplifier operates within the 17 to 24 GHz frequency band, which makes it suitable for various high-frequency applications.
2. Gain: It offers a typical small signal gain of around 19 dB, ensuring signal amplification with minimal distortion.
3. Output Power: The HMC998 provides a saturated output power (Psat) of approximately +38 dBm, delivering high power levels necessary for effective signal transmission.
4. Efficiency: The power-added efficiency (PAE) is typically around 25%, which indicates its effectiveness in converting DC input power to RF output power.
5. Input/Output Match: The amplifier is internally matched to 50 ohms, simplifying integration into systems and reducing the need for additional matching components.
6. Supply Voltage: It operates with a supply voltage of 6V, which is common for GaAs amplifiers, and typically requires a negative gate voltage for biasing.
7. Package: The device is available in a compact, leadless 5x5 mm SMT package, facilitating easy integration into various electronic assemblies.
These features make the HMC998 suitable for applications such as point-to-point radios, VSATs, and test equipment.

Pinout

The HMC998 is a GaAs MMIC Power Amplifier chip. It typically has a 32-pin package when in its standard QFN (Quad-Flat No-leads) form. It operates across a frequency range of 7 to 9 GHz, making it suitable for various microwave applications.
Key functions and features include:
- High linearity and efficiency, delivering a saturated output power of up to 30 dBm.
- Gain of around 20 dB, with a high level of output power for its class.
- Integrated power detector for output power monitoring.
- The device requires a single positive supply voltage, simplifying its integration into systems.
The pin configuration includes RF input and output ports, DC supply and ground connections, and control pins for biasing and power configuration. Each pin's function supports the amplifier's role in boosting RF signals while maintaining signal integrity and performance across its operational range.
For precise pin configuration and detailed electrical specifications, referring to the manufacturer's datasheet is recommended.

Manufacturer

The HMC998 is manufactured by Analog Devices, Inc. Analog Devices is a multinational semiconductor company specializing in the design and manufacturing of analog, mixed-signal, and digital signal processing (DSP) integrated circuits. They provide a broad range of products and solutions for various industries, including communications, industrial, automotive, healthcare, and consumer electronics. The company is known for its innovations in signal processing and its comprehensive portfolio of high-performance semiconductors.

Application

The HMC998 is a GaAs MMIC power amplifier primarily used in applications requiring high linearity and power. It is suitable for:
1. Communication Systems: Used in base stations for cellular and mobile networks, satellite communications, and wireless infrastructure.

2. Radar Systems: Employed in military and commercial radar systems due to its high power and efficiency.
3. Test and Measurement Equipment: Utilized in RF test equipment for signal amplification.
4. Point-to-Point and Point-to-Multipoint Radios: Provides power amplification in microwave radio links.
5. Instrumentation: Suitable for lab and industrial applications requiring high output power and wide bandwidth.
The HMC998 is valued for its high power output, efficiency, and broad frequency range.

Package

The HMC998 is typically available in a RoHS-compliant 32-lead 5x5 mm QFN (Quad Flat No-Lead) package. This surface-mount package allows for efficient heat dissipation and is suitable for compact and high-frequency applications.

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