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HR641680E
+БОМ-
ПроизводительHANRUN ((Zhongshan HanRun Elec)
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Мфр. Часть #HR641680E
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Лист данных HR641680E DataSheet
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В наличии28424
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | HANRUN(Zhongshan HanRun Elec) |
| Package / Case | SMD-16P,12.7x9.5mm |
| Turns Ratio | 1:1 |
Обзор
Equivalent
- CY7C1680KV18 (Cypress)
- IDT71V67803S (IDT/Renesas)
- IS61WV102416BLL (ISSI)
- AS7C16800A (Alliance Memory)
These alternatives offer comparable speed (up to 166MHz) and density (16Mb). Verify pin compatibility and voltage requirements (3.3V typical) for your design. Always check datasheets for exact specifications.
Features
- Capacity: 1GB (8Gb)
- Interface: DDR3, 1.5V operation
- Speed: Up to 1600 Mbps/pin (PC3-12800)
- Organization: 128M x 8 (8-bit bus)
- Low Power: Supports auto-refresh & self-refresh modes
- Reliability: Industrial-grade (-40°C to +95°C)
- Packaging: 96-ball FBGA (6x9mm)
- Applications: IoT, networking, automotive, and industrial devices
Compact and efficient, it ensures stable performance in demanding environments.
Pinout
Key Functions:
- 64Mbit (8MB) capacity
- 16-bit data bus
- Supports fast page mode (FPM) and extended data out (EDO) operations
- Used in 486/Pentium-era systems
Pin Functions Include:
- Address inputs (A0-A10)
- Data I/O (DQ0-DQ15)
- Control signals (/RAS, /CAS, /WE, /OE)
- Power supply (VCC, VSS)
This DRAM is now obsolete but was widely used in 1990s PCs.