IHW20N120R5

Изображения являются только для ссылки

IHW20N120R5

+БОМ

IHW20N120 - DISCRETE IGBT WITH A

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IHW20N120R5

  • Лист данных IHW20N120R5 DataSheet

  • Пакет TO-247-3

  • В наличии1665

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Bulk
Part Status Active

Обзор

Features

The IHW20N120R5 is a 1200V, 20A IGBT with a co-packaged ultra-fast diode, designed for high-efficiency switching applications. Key features include:
- Voltage & Current Ratings: 1200V VCES, 20A IC (at 25°C).
- Low VCE(sat): 1.85V (typical) at 10A, reducing conduction losses.
- Fast Switching: Optimized for high-frequency applications (e.g., inverters, SMPS).
- Integrated Diode: Ultra-fast reverse recovery diode (trr < 100ns) minimizes switching losses.
- High Temp Operation: Rated up to 175°C for robust performance.
- Low Gate Charge (QG): Enhances drive efficiency.
- TO-247 Package: Ensures good thermal dissipation.
Ideal for motor drives, solar inverters, and industrial power systems.

Pinout

The IHW20N120R5 is an IGBT (Insulated Gate Bipolar Transistor) with a TO-247-3 package, featuring 3 pins:
1. Gate (G) – Controls switching.
2. Collector (C) – High-voltage terminal (1200V rated).
3. Emitter (E) – Current return path.
Key Features:
- Voltage Rating: 1200V
- Current Rating: 40A (at 100°C)
- Low VCE(sat) for reduced conduction losses.
- Fast switching for high-efficiency applications like inverters and motor drives.
Designed for high-power switching in industrial and automotive systems.

Manufacturer

The IHW20N120R5 is a 1200V, 20A IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, a leading German semiconductor company specializing in power electronics, automotive chips, and IoT solutions.
Infineon is known for high-performance power devices, serving industries like automotive, industrial, and renewable energy. The IHW20N120R5 is part of their TRENCHSTOP™ 5 series, optimized for efficiency in applications like motor drives and inverters.

Application

The IHW20N120R5, a 1200V/20A IGBT, is commonly used in:
1. Power Supplies – High-efficiency SMPS and UPS systems.
2. Motor Drives – Industrial and automotive motor control.
3. Renewable Energy – Solar inverters and wind power converters.
4. Welding Equipment – High-power inverter-based welders.
5. Induction Heating – Fast-switching for heating systems.
Its low saturation voltage and robust thermal performance make it suitable for high-frequency switching applications.

Package

The IHW20N120R5 is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. This package type is widely used for high-power applications due to its robust thermal and electrical performance. The TO-247 has three leads and is designed for efficient heat dissipation, making it suitable for demanding circuits like motor drives and inverters.

Продукты, связанные с IHW20N120R5

  • Быстрая цитата

  • Отправьте запрос на котировку IHW20N120R5 Используя эту форму, мы ответим в течение 12 часов.