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IKP10N60T
+БОМIGBTs LOW LOSS DuoPack 600V 10A
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IKP10N60T
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Лист данных IKP10N60T DataSheet
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В наличии23586
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Tube |
| Standard Pack Qty | 500 |
Обзор
Description
The IKP10N60T is often used in power supply units, photovoltaic inverters, and other power management systems due to its robustness and reliability. Key features include a low drain-source on-state resistance (RDS(on)), high speed of operation, and enhanced thermal performance. These attributes make it ideal for applications requiring efficient energy conversion and minimal heat dissipation.
In summary, the IKP10N60T is a high-voltage MOSFET characterized by its efficiency and reliability, suitable for various high-power applications, contributing to the reduction of overall energy consumption in electronic systems.
Equivalent
1. STP10NK60Z by STMicroelectronics
2. IRFP460 by Infineon Technologies
3. FDPF10N60NZ by ON Semiconductor
These alternatives can vary slightly in specifications, so it's important to check the datasheets to ensure compatibility with your specific application requirements.
Features
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 10A at a 25°C case temperature.
3. R_DS(on): It has a low on-resistance, typically around 0.47 ohms, which reduces power losses during operation.
4. Package: It is commonly available in a TO-220 package, which is standard for power semiconductors, offering ease of mounting and heat dissipation.
5. Temperature Range: Operates over a wide temperature range, with a maximum junction temperature of 150°C.
6. Switching Speed: Fast switching capabilities make it suitable for applications requiring quick response times.
7. Applications: Ideal for use in power supplies, motor control circuits, and other high-efficiency power management systems.
These features make the IKP10N60T a versatile choice for various industrial and consumer electronic applications.
Pinout
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load current enters the MOSFET. It connects to the positive side of the load.
3. Source (S): This pin is where the load current exits the MOSFET. It connects to the ground or negative side of the supply.
The IKP10N60T is used in various applications, including power supplies and motor controls, due to its ability to handle high voltage (up to 600 V) and moderate current levels. Its design allows for efficient switching, making it suitable for high-frequency applications.