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IPA083N10N5
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPA083N10N5
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В наличии7978
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Type | Through Hole |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 0.068784 oz |
| Package / Case | TO-220FP-3 |
Обзор
Description
The MOSFET's fast switching capabilities enable efficient operation in high-frequency applications, reducing heat generation and improving overall system performance. Additionally, it is packaged in a TO-220 format, facilitating easy heat dissipation and integration into various electronic circuits.
This component is widely used in automotive, industrial, and consumer electronics, where reliability and performance are crucial. When utilizing IPA083N10N5, proper thermal management and adherence to the specified maximum ratings are essential for optimal functionality.
Equivalent
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 83A, allowing for robust performance in power switching applications.
3. R_DS(on): The on-resistance is low, usually around 10 mΩ, which leads to reduced conduction losses and improved efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is relatively low, enabling easy driving by standard logic levels.
5. Package: It is commonly available in TO-220 or similar packages, which facilitate effective heat dissipation.
6. Fast Switching: Optimized for fast switching capabilities, making it ideal for applications like DC-DC converters and motor drivers.
Overall, the IPA083N10N5 is well-suited for power management and high-efficiency applications in consumer electronics, automotive, and industrial sectors.
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load; current flows from the drain to the source when the MOSFET is on.
3. Source (S) - Connects to ground (or the lower potential) in typical applications.
4. Gate-Source (G-S) diode - Provides protection against negative gate-source voltage.
5. Thermal pad - For heat dissipation, improving thermal performance.
The device features low on-resistance and high-speed switching, making it suitable for various applications in power electronics. Always refer to the datasheet for detailed specifications and ratings.