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IPB048N15N5LF
+БОМMOSFETs TRENCH >=100V
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPB048N15N5LF
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Лист данных IPB048N15N5LF DataSheet
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В наличии17533
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Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
Обзор
Description
The "N" in its designation indicates it is a N-channel MOSFET, meaning it conducts when a positive voltage is applied to the gate relative to the source. The IPB048N15N5LF is part of the OptiMOS™ series, which is optimized for both low and high-side configurations. Its compact design allows for efficient thermal management, making it suitable for applications with space constraints. Overall, this MOSFET is valued for its high performance, reliability, and efficiency in demanding power applications.
Equivalent
1. STMicroelectronics: STF30N60DM2
2. ON Semiconductor: FQP30N06L
3. Vishay: SiR460DP
4. Nexperia: PSMN1R0-30YLD
Always compare the specifications like voltage rating, current capacity, Rds(on), and packaging to ensure compatibility for your application.
Features
1. Technology: It utilizes Infineon's OptiMOS™ technology, known for superior efficiency and performance.
2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 150V.
3. Current Rating: It can handle a continuous drain current (I_D) of around 48A, depending on the specific conditions and packaging.
4. R_DS(on): The MOSFET has a low on-state resistance (R_DS(on)), which minimizes power losses and enhances efficiency.
5. Package Type: Typically available in a TO-220 package, which provides good thermal performance and ease of mounting.
6. Applications: It is suitable for use in high-frequency switching power supplies, DC-DC converters, and synchronous rectification.
7. Efficiency: The device is optimized for low switching and conduction losses, making it suitable for energy-efficient applications.
This combination of features makes the IPB048N15N5LF an excellent choice for applications requiring reliable performance and high efficiency.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is on.
3. Source (S): The source is the terminal through which the current exits the MOSFET.
This MOSFET is designed for high efficiency and low-power applications, featuring low on-state resistance, making it suitable for use in power management and switching applications.
Manufacturer
Application
1. Switching Power Supplies: Used in DC-DC converters and SMPS for computers and industrial equipment.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Inverters: Employed in solar inverters, UPS systems, and power inverters for renewable energy.
4. Load Switches: Utilized in battery management systems and load switching in portable devices.
5. Audio Amplifiers: Can be used in Class D audio amplifiers for improved efficiency.
Its robust construction makes it ideal for high-power and high-frequency applications.