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IPD90N04S4-05
+БОМMOSFETs N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD90N04S4-05
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Лист данных IPD90N04S4-05 DataSheet
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В наличии5891
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Обзор
Description
It features a low on-resistance, which minimizes power loss, and its fast switching capabilities make it suitable for high-speed applications. The device is often used in automotive, industrial, and consumer electronics applications due to its reliability and robustness. It is housed in a standard package that facilitates heat dissipation, essential for maintaining performance under high loads. Overall, the IPD90N04S4-05 is valued for its efficiency, thermal performance, and ability to handle substantial power, making it a versatile choice for designers seeking to optimize their power systems.
Equivalent
1. IRFZ44N from Infineon.
2. FQP30N06L from ON Semiconductor.
3. STP80NF55 from STMicroelectronics.
Always verify specific parameters like package type, RDS(on), and gate charge to ensure compatibility.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: Can handle voltages up to 40V.
3. Current Rating: Capable of conducting continuous currents up to 90A.
4. RDS(on): Low on-resistance, enhancing efficiency by minimizing power loss, typically around 5 mΩ.
5. Package: Available in a TO-252 (DPAK) package, which facilitates surface mounting and compact design.
6. Technology: Utilizes advanced Trench technology for improved performance.
7. Thermal Performance: High thermal efficiency, suitable for use in high-power applications due to its efficient heat dissipation.
8. Applications: Commonly used in automotive systems, DC-DC converters, power management, and motor control circuits.
9. Protection: Contains built-in avalanche ruggedness for enhanced reliability under high-energy conditions.
10. Switching Speed: Features fast switching capabilities, which is crucial for high-frequency applications.
These features make the IPD90N04S4-05 a versatile choice for various power management and control applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in an on (conducting) or off (non-conducting) state.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the on state. It is connected to the load in a typical configuration.
3. Source (S): This pin is connected to the ground or reference voltage in most applications. It serves as the return path for the current flowing through the MOSFET when it is on.
The IPD90N04S4-05 is designed for applications requiring high efficiency and fast switching, typically used in power management, automotive, and industrial applications.
Manufacturer
Application
1. Power Management: Used in power supply circuits for efficient switching and regulation.
2. Automotive Systems: Ideal for motor control, lighting, and battery management due to its reliability in harsh conditions.
3. Industrial Automation: Employed in controlling actuators and relays in automation systems.
4. Consumer Electronics: Used in devices requiring efficient power conversion and management.
5. Telecommunications: Assists in managing power in networking devices and communication systems.
The MOSFET's characteristics make it suitable for applications where power efficiency and thermal performance are critical.