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IPP032N06N3G
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPP032N06N3G
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В наличии6730
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Infineon Technologies |
| Package / Case | TO-220 |
| Drain to Source Voltage (Vdss) | 60V |
| Pd - Power Dissipation | 188W |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 2V |
Обзор
Description
Key features include a low R_DS(on) (drain-source on-resistance), which minimizes power losses during operation, and fast switching speeds that enhance efficiency in high-frequency applications. The IPP032N06N3G also offers a robust thermal performance, allowing it to operate effectively in demanding environments. Its compact package design facilitates easier integration into circuits while supporting automated assembly processes. Overall, it is a reliable component for engineers seeking to optimize power management solutions in electronic designs.
Equivalent
1. IRF3205
2. FQP30N06L
3. BSS138
4. STP30NF06L
5. PSMN2R8-80BS
Ensure to check specifications like voltage, current, and Rds(on) for compatibility before substitution.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Handling: The device can handle continuous drain current up to 32A, allowing for significant power delivery.
3. Low On-Resistance: With a low R_DS(on) typically around 8.5 mΩ, it minimizes conduction losses, enhancing efficiency in power circuits.
4. Fast Switching: This MOSFET supports high-speed switching, which is beneficial for applications in power supplies and motor drivers.
5. Package Type: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
6. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) ranging from 1V to 3V, enabling compatibility with low-voltage control signals.
Overall, the IPP032N06N3G is ideal for applications requiring high efficiency and reliability, such as in power converters and inverters.
Pinout
The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. By applying a voltage to the gate, you can turn the device on or off.
2. Drain (D): This is the main current-carrying terminal. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or a lower voltage point in the circuit when the MOSFET is used for switching applications.
The IPP032N06N3G is designed for high efficiency, with a low on-resistance, making it suitable for applications like power supplies and motor drivers.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for voltage regulation.
2. Motor Control: Employed in driving electric motors for robotics and industrial automation.
3. DC-DC Converters: Utilized in various converter designs for efficient power management.
4. LED Drivers: Applied in LED lighting solutions for optimal current control.
5. Inverters: Used in renewable energy systems, such as solar inverters, for efficient power conversion.
Its high-speed switching capabilities make it suitable for diverse electronic applications.