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IR2109STRPBF
+БОМIR2109S - GATE DRIVER
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ПроизводительМеждународный исправитель
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Мфр. Часть #IR2109STRPBF
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Лист данных IR2109STRPBF DataSheet
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Пакет SOIC-8
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В наличии3031
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Bulk |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VILVIH | 0.8V, 2.9V |
| Current - Peak Output(Source Sink) | 200mA, 350mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 150ns, 50ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
Key features include:
1. Floating Channel: Capable of driving high-side devices up to 600V.
2. Under-Voltage Lockout: Ensures safe operation by preventing the MOSFETs from operating in low-voltage conditions.
3. Dead-Time Protection: Configurable dead-time to prevent shoot-through in the half-bridge.
4. Input Logic Compatibility: Compatible with standard CMOS or LSTTL output levels for easy interfacing.
5. Bootstrap Operation: Simplifies high-side drive circuitry.
The IC is available in surface-mount packaging, making it suitable for compact and efficient designs. Its robust design and protective features make it a reliable choice for various industrial and consumer applications.
Equivalent
Features
1. High-Voltage Tolerant: Can handle up to 600V, making it suitable for a wide range of power applications.
2. High-Speed Operation: Capable of operating at high frequencies with fast switching times, enhancing efficiency.
3. Floating Channel Design: Allows for easy bootstrap operation, simplifying the design of high-side driver circuits.
4. Under-Voltage Lockout: Provides protection by ensuring that the IC does not operate if the supply voltage is too low, preventing potential damage.
5. Gate Drive Outputs: Provides strong gate drive capability, enabling rapid and efficient switching of power MOSFETs or IGBTs.
6. Integrated Dead-Time Control: Helps prevent shoot-through by providing built-in dead-time between high-side and low-side switch operations.
7. Compact Package: Available in a SOIC-8 package, facilitating space-saving designs.
These features make the IR2109STRPBF ideal for use in motor drives, power supplies, and other applications requiring effective power switching.
Pinout
The IR2109STRPBF comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin functions are as follows:
1. VCC: Logic and low-side driver supply voltage.
2. IN: Logic input for the low-side and high-side driver.
3. COM: Logic ground.
4. LO: Low-side gate drive output.
5. VS: High-side floating supply return.
6. HO: High-side gate drive output.
7. VB: High-side floating supply.
8. NC: No connection.
This configuration allows the IR2109STRPBF to effectively drive both the high-side and low-side switches in a half-bridge circuit, facilitating efficient power switching and control.