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IRF1010EZSTRLP
+БОМMOSFET N-CH 60V 75A D2PAK
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF1010EZSTRLP
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Лист данных IRF1010EZSTRLP DataSheet
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Пакет TO-263-3
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В наличии1509
365 Дни гарантии качества
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Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.5mOhm @ 51A, 10V |
| Vgs(th)(Max)@Id | 4V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 86 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2810 pF @ 25 V |
| PowerDissipation(Max) | 140W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Обзор
Description
Key specifications often include a high voltage rating, significant current handling capacity, and thermal efficiency, which contribute to its reliability and performance in demanding environments. The "EZ" in its designation usually implies ease of use or enhanced performance characteristics, while the "S" could indicate a specific packaging type, such as surface mount (SMD).
This component is organized in a specific package type, potentially enhancing its integration into printed circuit boards (PCBs) for compact electronics designs. It is essential to consult the manufacturer's datasheet for detailed technical specifications, pin configurations, and application guidelines to ensure proper implementation in your specific project.
Equivalent
1. STP55NF06 by STMicroelectronics
2. FQP30N06L by ON Semiconductor
3. NDP6060L by ON Semiconductor
4. IPP060N06N by Infineon
Make sure to verify specific electrical characteristics and package types, as equivalents may vary slightly in their specifications. Always check datasheets before substituting to ensure compatibility with your application.
Features
Key features include:
1. N-Channel MOSFET: Optimized for low conduction losses and fast switching.
2. Low On-Resistance (RDS(on)): Enhances performance by reducing power dissipation.
3. High-Speed Switching: Suitable for applications requiring fast transitions.
4. Compact Package: Available in a surface-mount package that saves space on circuit boards.
5. Rugged Design: Capable of handling high power and voltage levels with robustness against various stress conditions.
These features make the IRF1010EZSTRLP a versatile and reliable choice for designers seeking efficient power management solutions. Always refer to the datasheet for detailed specifications and application guidelines.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate controls the current flow between the drain and source.
2. Drain (D): This is the pin through which the main current enters the MOSFET. In the case of N-channel MOSFETs like the IRF1010EZSTRLP, current flows from drain to source when the MOSFET is on.
3. Source (S): This pin is the terminal for the current leaving the MOSFET.
Additionally, the package's metal tab or pad is usually connected to the drain and aids in heat dissipation. The IRF1010EZSTRLP is utilized in applications where efficient power management and control are required.
Manufacturer
Application
1. Power Supply Circuits: Used in SMPS (Switch Mode Power Supplies) for efficient energy conversion.
2. Motor Drives: Facilitates control in DC motor applications.
3. DC-DC Converters: Helps in voltage regulation and conversion tasks.
4. Battery Management Systems: Manages charging and discharging in battery-operated devices.
5. Inverters: Utilized in inverting DC to AC power.
6. Audio Amplifiers: Supports high-efficiency amplification processes.
7. Lighting Systems: Employed in LED drivers for stable operation.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.