IRF1010EZSTRLP

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IRF1010EZSTRLP

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MOSFET N-CH 60V 75A D2PAK

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF1010EZSTRLP

  • Лист данных IRF1010EZSTRLP DataSheet

  • Пакет TO-263-3

  • В наличии1509

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 8.5mOhm @ 51A, 10V
Vgs(th)(Max)@Id 4V @ 100µA
GateCharge(Qg)(Max)@Vgs 86 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2810 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Обзор

Description

The IRF1010EZSTRLP is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for applications requiring efficient power management. This device typically features low on-resistance and high-speed switching capabilities, making it suitable for use in power supply systems, motor drives, and other high-performance electronic applications.
Key specifications often include a high voltage rating, significant current handling capacity, and thermal efficiency, which contribute to its reliability and performance in demanding environments. The "EZ" in its designation usually implies ease of use or enhanced performance characteristics, while the "S" could indicate a specific packaging type, such as surface mount (SMD).
This component is organized in a specific package type, potentially enhancing its integration into printed circuit boards (PCBs) for compact electronics designs. It is essential to consult the manufacturer's datasheet for detailed technical specifications, pin configurations, and application guidelines to ensure proper implementation in your specific project.

Equivalent

The IRF1010EZSTRLP is a power MOSFET. Equivalent products include:
1. STP55NF06 by STMicroelectronics
2. FQP30N06L by ON Semiconductor
3. NDP6060L by ON Semiconductor
4. IPP060N06N by Infineon
Make sure to verify specific electrical characteristics and package types, as equivalents may vary slightly in their specifications. Always check datasheets before substituting to ensure compatibility with your application.

Features

The IRF1010EZSTRLP is a power MOSFET featuring advanced technology for efficient power management. It offers a low on-resistance, which minimizes power loss and improves efficiency. The device is designed for high-speed switching applications, making it suitable for a wide range of applications including power supplies, motor drives, and DC-DC converters.
Key features include:
1. N-Channel MOSFET: Optimized for low conduction losses and fast switching.
2. Low On-Resistance (RDS(on)): Enhances performance by reducing power dissipation.
3. High-Speed Switching: Suitable for applications requiring fast transitions.
4. Compact Package: Available in a surface-mount package that saves space on circuit boards.
5. Rugged Design: Capable of handling high power and voltage levels with robustness against various stress conditions.
These features make the IRF1010EZSTRLP a versatile and reliable choice for designers seeking efficient power management solutions. Always refer to the datasheet for detailed specifications and application guidelines.

Pinout

The IRF1010EZSTRLP is a power MOSFET, specifically a N-channel MOSFET, used in various electronic applications for switching and amplification. It typically comes in a D-PAK (TO-252) package, which generally has 3 pins. The pin configuration and functions for the D-PAK package are:
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate controls the current flow between the drain and source.
2. Drain (D): This is the pin through which the main current enters the MOSFET. In the case of N-channel MOSFETs like the IRF1010EZSTRLP, current flows from drain to source when the MOSFET is on.
3. Source (S): This pin is the terminal for the current leaving the MOSFET.
Additionally, the package's metal tab or pad is usually connected to the drain and aids in heat dissipation. The IRF1010EZSTRLP is utilized in applications where efficient power management and control are required.

Manufacturer

The IRF1010EZSTRLP is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that develops, manufactures, and markets a wide range of semiconductor products. The company is a key player in the global semiconductor industry, providing products for automotive, industrial, consumer electronics, and security applications. Infineon's offerings include power semiconductors, microcontrollers, sensors, and other advanced semiconductor solutions designed to ensure energy efficiency, mobility, and security in electronic devices.

Application

The IRF1010EZSTRLP is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management. Its application areas include:
1. Power Supply Circuits: Used in SMPS (Switch Mode Power Supplies) for efficient energy conversion.
2. Motor Drives: Facilitates control in DC motor applications.
3. DC-DC Converters: Helps in voltage regulation and conversion tasks.
4. Battery Management Systems: Manages charging and discharging in battery-operated devices.
5. Inverters: Utilized in inverting DC to AC power.
6. Audio Amplifiers: Supports high-efficiency amplification processes.
7. Lighting Systems: Employed in LED drivers for stable operation.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.

Package

The IRF1010EZSTRLP is a MOSFET that comes in a D2PAK (TO-263) surface-mount package. This type of packaging is designed for efficient heat dissipation and is commonly used in applications requiring high power handling and space-efficient designs.

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