IRF135S203

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IRF135S203

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MOSFET N-CH 135V 129A TO263-3

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF135S203

  • Лист данных IRF135S203 DataSheet

  • Пакет TO-263-3

  • В наличии1512

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®, StrongIRFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 135 V
Current - Continuous Drain(Id) @ 25°C 129A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 8.4mOhm @ 77A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 270 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 9700 pF @ 50 V
Power Dissipation (Max) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2

Обзор

Description

The IRF135S203 is a 200V, 135A N-channel MOSFET designed for high-power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 2.3mΩ (at VGS=10V), reducing conduction losses.
- High Current Handling: Supports up to 135A continuous drain current.
- Fast Switching: Optimized for efficiency in DC-DC converters, motor drives, and power supplies.
- Robust Packaging: TO-263 (D2PAK) for effective thermal dissipation.
Applications include battery management systems, inverters, and industrial power controls. Ensure proper gate drive voltage (VGS ≥ 10V for full performance) and heat management for optimal operation.

Equivalent

Equivalent products to the IRF135S203 (a 20V, 135A MOSFET) include:
- IRF1405 (55V, 169A)
- IRF1324S-7PPbF (40V, 195A)
- IRF1324L (40V, 195A)
- IRF1404 (40V, 162A)
- IRFB3206 (60V, 180A)
Check datasheets for exact specs and compatibility.

Features

The IRF135S203 is a power MOSFET with the following key features:
- Voltage Rating: 203V (Drain-Source, VDSS)
- Current Rating: 135A (Continuous Drain Current, ID)
- Low On-Resistance: 3.3 mΩ (RDS(on) at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Package: TO-247 (3-pin, robust thermal performance)
- Gate-Source Voltage (VGS): ±20V (max)
- Power Dissipation: 300W (with proper heat sinking)
Ideal for high-current DC/DC converters, motor drives, and power switching applications.

Pinout

The IRF135S203 is a Power MOSFET with the following specifications:
- Pin Count: 3 pins (TO-220 package: Gate, Drain, Source).
- Function: Designed for high-power switching applications, it operates at 200V drain-source voltage (VDSS) and 135A continuous drain current (ID).
- Low On-Resistance (RDS(on)): 2.3mΩ (typical at 10V VGS), ensuring efficient power handling.
- Fast Switching: Suitable for DC-DC converters, motor drives, and inverters.
Key features include avalanche ruggedness and low gate charge, enhancing performance in demanding circuits.

Package

The IRF135S203 is a power MOSFET typically available in a TO-263 (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance with a metal tab for heat dissipation. It is commonly used in switching circuits, power supplies, and motor control. The "S203" suffix may indicate specific manufacturer variations, so always verify datasheet details for exact specifications.

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