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IRF1404ZPBF
+БОМMOSFET N-CH 40V 180A TO220AB
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF1404ZPBF
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Лист данных IRF1404ZPBF DataSheet
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Пакет TO-220
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В наличии6484
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Bulk,Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.7mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4340 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Обзор
Description
Key specifications include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 202A, making it suitable for high-current applications. It has a low on-resistance (R_DS(on)), typically around 5.3 milliohms, which minimizes power loss and improves efficiency. The TO-220 package provides good thermal performance, allowing efficient heat dissipation.
These features make the IRF1404ZPBF ideal for applications in automotive, industrial, and consumer electronics where high-current switching is required, such as in motor control, power supplies, and battery management systems. Its robust design and high-performance characteristics ensure reliability in demanding environments.
Equivalent
Features
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 40V and can handle a continuous drain current (I_D) of up to 202A at 25°C, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of approximately 4.0 mΩ, which helps reduce power losses and improve efficiency.
3. Fast Switching Speed: Its design allows for rapid switching, which is advantageous in applications requiring high-speed operation.
4. Thermal Performance: The device features a low thermal resistance, aiding in effective heat dissipation during operation.
5. Package Type: It is available in a TO-220 package, which provides a good balance of size and heat dissipation capabilities.
6. Ruggedness: Designed to withstand high levels of stress, it is often used in environments where reliability is critical, such as automotive, industrial, and power management systems.
These features make the IRF1404ZPBF a versatile choice for various power management and conversion tasks.
Pinout
1. Gate (G): This pin is used to trigger the MOSFET into conduction by applying a voltage. It controls the flow of current between the drain and source.
2. Drain (D): The drain is where the current enters the MOSFET. It is connected to the load in a typical circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET. It is usually connected to the ground or the negative side of the power supply in a circuit.
The IRF1404ZPBF is designed for high efficiency and fast switching, making it suitable for applications like motor drives, power supplies, and other high-current applications.
Manufacturer
Application
1. Automotive Systems: Used in electronic control units (ECUs) for switching and power distribution.
2. Power Supply Units: Ideal for DC-DC converters and voltage regulation in power supply circuits.
3. Motor Control: Employed in motor drivers and controllers for industrial and consumer applications.
4. Solar Inverters: Utilized in the conversion process within solar power systems.
5. Battery Management Systems: Used in controlling charging and discharging cycles in battery-powered devices.
These applications leverage its low on-resistance and high current-carrying capability.