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IRF200S234
+БОМMOSFET N-CH 200V 90A D2PAK
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF200S234
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Лист данных IRF200S234 DataSheet
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Пакет TO-263-3
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В наличии6629
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 90A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 16.9mOhm @ 51A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 162 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6484 pF @ 50 V |
| Power Dissipation (Max) | 417W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
Обзор
Description
- Voltage Rating: 200V
- Current Rating: 234A (pulsed)
- Low On-Resistance (RDS(on)): Typically in the milliohm range, ensuring efficient power handling.
- Fast Switching: Suitable for high-frequency applications like motor drives, inverters, and power supplies.
- Robust Packaging: Often in TO-247 or similar, aiding heat dissipation.
It’s ideal for demanding industrial and automotive systems where high current and voltage handling are critical. Always refer to the datasheet for precise specifications and thermal management guidelines.
Equivalent
- IRF200S234 (same part)
- IRF200S (similar series)
- IRFP250N (comparable specs)
- STP20NM50FD (STMicro alternative)
- IXFH20N50 (IXYS alternative)
Check datasheets for exact compatibility in voltage (500V), current (20A), and package (TO-247). Always verify pinout and thermal specs before substitution.
Features
- Voltage Rating: 200V (drain-source, VDSS)
- Current Rating: 234A (continuous drain current, ID)
- Low On-Resistance (RDS(on)): ~1.7mΩ (typical at 10V VGS)
- Fast Switching: Optimized for high-efficiency applications
- Robust Design: Avalanche energy rated for ruggedness
- Package: TO-247 (3-pin), suitable for high-power applications
- Gate-Source Voltage (VGS): ±20V (max)
Ideal for motor drives, inverters, and high-current DC/DC converters due to its low conduction losses and high current handling.
Pinout
- Pin Count: 3 (standard TO-220 package: Gate, Drain, Source)
- Function: N-channel MOSFET designed for high-power switching applications.
- Gate (G): Controls the switching operation.
- Drain (D): Connects to the load (high-voltage side).
- Source (S): Ground/reference terminal.
Key features include a 200V drain-source voltage (VDS) and 234A continuous drain current (ID), making it suitable for inverters, motor drives, and power supplies.
Application
1. Power Supplies – Switch-mode power supplies (SMPS) and DC-DC converters.
2. Motor Control – Drives for industrial motors, robotics, and EVs.
3. Renewable Energy – Solar inverters and wind power systems.
4. Industrial Equipment – Welding machines, UPS systems, and induction heating.
5. Automotive – Electric vehicle (EV) power management and battery systems.
Its low on-resistance and high voltage tolerance make it ideal for energy-efficient, high-performance applications.