IRF2804PBF

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IRF2804PBF

+БОМ

MOSFET N-CH 40V 75A TO220AB

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF2804PBF

  • Лист данных IRF2804PBF DataSheet

  • Пакет TO-220

  • В наличии5524

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Спецификации

Атрибут Ценность
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 75A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 240 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6450 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Обзор

Equivalent

Equivalent products to the IRF2804PBF (55V, 75A N-channel MOSFET) include:
- IRF2804ZPBF (same specs, different packaging)
- IRF3205PBF (55V, 110A, higher current)
- IRFB3206PBF (60V, 130A, similar performance)
- STP80NF55-06 (55V, 80A, STMicro alternative)
- FDP8870 (80V, 120A, higher voltage)
Check datasheets for exact compatibility in your application.

Features

The IRF2804PBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 75A (continuous)
- Low On-Resistance (RDS(on)): 2.0 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Gate Charge (Qg): 110nC (typical)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole, easy mounting)
- Applications: DC-DC converters, motor control, power supplies
It offers high current handling, low conduction losses, and reliable performance in demanding environments.

Pinout

The IRF2804PBF is a Power MOSFET with the following specifications:
- Pin Count: 3 (TO-220AB package)
- Functions:
- Gate (G): Controls switching.
- Drain (D): High-voltage/current terminal (connected to load).
- Source (S): Ground/reference terminal.
- Key Features:
- VDSS: 40V
- ID: 75A (continuous)
- RDS(on): 2.0mΩ (max at VGS=10V)
- Logic-Level Gate Drive (VGS≥4.5V)
Commonly used in power switching, motor control, and DC-DC converters.

Application

The IRF2804PBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC systems.
2. Motor Control – Drives motors in automotive, industrial, and robotics applications.
3. Inverters – Converts DC to AC in solar power systems and UPS units.
4. LED Drivers – Controls high-power LED lighting circuits.
5. Battery Management – Used in charge/discharge circuits for energy storage.
Its low on-resistance (RDS(on)) and high current handling (75A) make it ideal for high-efficiency, high-power applications.

Package

The IRF2804PBF is packaged in a TO-263AB (D2PAK) type. This surface-mount package features a tab for heat dissipation, making it suitable for high-power applications. It has three leads and is commonly used in power MOSFET applications due to its robust thermal performance.

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