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IRF610PBF
+БОМMOSFET N-CH 200V 3.3A TO220AB
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRF610PBF
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В наличии18452
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Vishay Siliconix |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 3.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 140 pF @ 25 V |
| Power Dissipation (Max) | 36W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Обзор
Description
The IRF610PBF is a popular N-channel MOSFET manufactured by Infineon Technologies. It is part of the HEXFET® Power MOSFET series, known for its efficiency and performance in switching applications. This device is commonly used in power management, DC-DC converters, high-speed switching applications, and motor drives.
Key specifications include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of approximately 3.3A at 25°C, and a maximum power dissipation of 43W. The MOSFET features a low on-resistance (R_DS(on)) of about 0.4 ohms, which contributes to reduced conduction losses and improved efficiency. The IRF610PBF is encapsulated in a TO-220 package, offering excellent thermal performance and ease of mounting.
This MOSFET is favored for its robust performance, ease of use, and reliability, making it suitable for a variety of electronic applications where efficient switching is crucial. Its "PBF" suffix indicates that the device is lead-free and RoHS compliant.
Key specifications include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) of approximately 3.3A at 25°C, and a maximum power dissipation of 43W. The MOSFET features a low on-resistance (R_DS(on)) of about 0.4 ohms, which contributes to reduced conduction losses and improved efficiency. The IRF610PBF is encapsulated in a TO-220 package, offering excellent thermal performance and ease of mounting.
This MOSFET is favored for its robust performance, ease of use, and reliability, making it suitable for a variety of electronic applications where efficient switching is crucial. Its "PBF" suffix indicates that the device is lead-free and RoHS compliant.
Equivalent
The IRF610PBF is a MOSFET commonly used for switching and amplification applications. Equivalent products include:
1. IRF610 (non-PBF version)
2. NTE2397
3. Vishay's IRF620
4. STMicroelectronics' STP10NK60Z
5. Fairchild's FQP3N80
When selecting equivalents, ensure to verify the key specifications like voltage rating, current rating, and Rds(on) to ensure compatibility with your application. Always refer to the datasheets for detailed comparison.
1. IRF610 (non-PBF version)
2. NTE2397
3. Vishay's IRF620
4. STMicroelectronics' STP10NK60Z
5. Fairchild's FQP3N80
When selecting equivalents, ensure to verify the key specifications like voltage rating, current rating, and Rds(on) to ensure compatibility with your application. Always refer to the datasheets for detailed comparison.
Features
The IRF610PBF is a Power MOSFET from Infineon Technologies designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 200V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 3.3A at 100°C, allowing for moderate current handling.
3. R_DS(on): It features a low on-resistance of 0.40 ohms, which helps reduce power loss and improve efficiency.
4. Package: The MOSFET is available in a TO-220 package, which provides good thermal performance and easy mounting.
5. Temperature Range: It operates efficiently in a wide temperature range from -55°C to 150°C.
6. Gate Charge: The device has a total gate charge of 12nC, which facilitates fast switching speeds, beneficial for high-frequency applications.
7. Pb-Free: It is lead-free (PBF) and compliant with RoHS standards, ensuring environmental safety.
These features make the IRF610PBF suitable for various applications, including power supplies, motor drivers, and amplifiers.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 200V, making it suitable for medium to high voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 3.3A at 100°C, allowing for moderate current handling.
3. R_DS(on): It features a low on-resistance of 0.40 ohms, which helps reduce power loss and improve efficiency.
4. Package: The MOSFET is available in a TO-220 package, which provides good thermal performance and easy mounting.
5. Temperature Range: It operates efficiently in a wide temperature range from -55°C to 150°C.
6. Gate Charge: The device has a total gate charge of 12nC, which facilitates fast switching speeds, beneficial for high-frequency applications.
7. Pb-Free: It is lead-free (PBF) and compliant with RoHS standards, ensuring environmental safety.
These features make the IRF610PBF suitable for various applications, including power supplies, motor drivers, and amplifiers.
Pinout
The IRF610PBF is an N-channel MOSFET with a standard pin count of three: Gate (G), Drain (D), and Source (S). These pins serve specific functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): The drain is the terminal through which current enters the MOSFET. It connects to the load in a typical circuit.
3. Source (S): The source is the terminal through which current exits the MOSFET. It is typically connected to ground in an N-channel MOSFET configuration.
The IRF610 is commonly used in applications such as switching power supplies, motor controllers, and amplifier circuits due to its capability to handle high voltages and currents. It is characterized by its low on-resistance and fast switching speeds, making it suitable for high-efficiency designs.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): The drain is the terminal through which current enters the MOSFET. It connects to the load in a typical circuit.
3. Source (S): The source is the terminal through which current exits the MOSFET. It is typically connected to ground in an N-channel MOSFET configuration.
The IRF610 is commonly used in applications such as switching power supplies, motor controllers, and amplifier circuits due to its capability to handle high voltages and currents. It is characterized by its low on-resistance and fast switching speeds, making it suitable for high-efficiency designs.
Manufacturer
The IRF610PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components, including power semiconductors, microcontrollers, sensors, and security ICs. It provides solutions for automotive, industrial, consumer electronics, and communication applications. The company is known for its focus on innovation and technology development in the semiconductor industry.
Application
The IRF610PBF is a power MOSFET commonly used in various applications due to its high-speed switching and efficiency. Key application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient power conversion.
2. Motor Controls: Facilitates precise control in various motor-driven applications.
3. Audio Amplifiers: Utilized for producing high-quality sound with efficient power consumption.
4. Battery Management Systems: Ensures optimal battery performance by managing charging and discharging processes.
5. Lighting Systems: Applied in LED drivers and other lighting controls for enhanced efficiency.
6. Telecommunications: Supports signal processing and power management in telecom equipment.
These applications benefit from the device's fast switching, reliability, and low on-resistance.
1. Switching Power Supplies: Used in converters and inverters for efficient power conversion.
2. Motor Controls: Facilitates precise control in various motor-driven applications.
3. Audio Amplifiers: Utilized for producing high-quality sound with efficient power consumption.
4. Battery Management Systems: Ensures optimal battery performance by managing charging and discharging processes.
5. Lighting Systems: Applied in LED drivers and other lighting controls for enhanced efficiency.
6. Telecommunications: Supports signal processing and power management in telecom equipment.
These applications benefit from the device's fast switching, reliability, and low on-resistance.
Package
The IRF610PBF is typically available in a TO-220 package, which is a through-hole type suitable for high-power applications.
