IRF7105TRPBF

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IRF7105TRPBF

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MOSFET N/P-CH 25V 8-SOIC

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF7105TRPBF

  • Лист данных IRF7105TRPBF DataSheet

  • Пакет SOP-8

  • В наличии2140

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain(Id) @ 25°C 3.5A, 2.3A
Rds On(Max) @ Id Vgs 100mOhm @ 1A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 27nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 330pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Обзор

Description

The IRF7105TRPBF is a dual N-channel MOSFET from Infineon, designed for high-efficiency power switching applications. It features two 55V, 4.3A MOSFETs in a SOIC-8 package, making it compact and suitable for space-constrained designs.
Key specifications:
- Drain-Source Voltage (VDS): 55V
- Continuous Drain Current (ID): 4.3A per MOSFET
- Low On-Resistance (RDS(on)): 70mΩ (max) at 10V
- Fast Switching Speed
- Logic-Level Gate Drive (compatible with 5V/10V signals)
Common applications include:
- DC-DC converters
- Motor control
- Power management in consumer electronics
Its dual-MOSFET configuration simplifies circuit design by reducing component count. The Pb-free (TRPBF) packaging ensures RoHS compliance.
For detailed performance curves and layout guidelines, refer to the datasheet.

Equivalent

Equivalent products to the IRF7105TRPBF (a 55V N-channel MOSFET) include:
- IRF7105PBF (same specs, different packaging)
- IRF7105TR (similar, tape and reel packaging)
- IRF7105 (base model)
- STP55NF06L (STMicroelectronics alternative)
- FQP50N06 (Fairchild/ON Semi alternative)
Check datasheets for exact compatibility in your circuit.

Features

The IRF7105TRPBF is a power MOSFET with the following key features:
- Voltage Rating: 55V (Drain-Source, VDSS)
- Current Rating: 43A (Continuous Drain, ID)
- Low On-Resistance: 8.0mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency applications
- Logic-Level Gate Drive: Threshold voltage (VGS(th)- Package: D2PAK (TO-263) for high power dissipation
- Avalanche Rated: Robust against inductive load spikes
- Applications: Power supplies, motor control, DC-DC converters
It combines low conduction losses with high switching performance, making it suitable for high-current, low-voltage applications.

Pinout

The IRF7105TRPBF is a dual N- and P-channel MOSFET in a SOIC-8 package, featuring 8 pins.
Pin Functions:
- Pins 1, 2, 3 (Drain1, Gate1, Source1): N-channel MOSFET.
- Pins 6, 7, 8 (Drain2, Gate2, Source2): P-channel MOSFET.
- Pins 4 & 5: Not connected (NC).
Key Features:
- Voltage Ratings: 40V (N-channel), -20V (P-channel).
- Current Ratings: 4.3A (N), -3.7A (P).
- Low RDS(on): Efficient switching.
Commonly used in power management, DC-DC converters, and motor control.

Application

The IRF7105TRPBF, a MOSFET pair (P-Channel and N-Channel), is commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for small motors.
3. Switching Circuits – Load switches, inverters.
4. Automotive Systems – Electronic control units (ECUs), lighting.
5. Consumer Electronics – Power supplies, battery management.
Its compact SOIC-8 package and efficient switching make it suitable for space-constrained, low-to-medium power applications.

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