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IRF7811ATR
+БОМMOSFET N-CH 28V 11A 8SO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF7811ATR
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В наличии6921
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 28 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V |
| RdsOn(Max)@Id,Vgs | 10mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 26 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 1760 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
Обзор
Description
The IRF7811ATR is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance (R_DS(on)), which minimizes conduction losses and improves efficiency in various circuits, especially in switching power supplies, motor control, and DC-DC converters.
Key specifications include a maximum drain-source voltage (V_DSS) typically around 30V and a continuous drain current (I_D) of up to 55A, depending on the thermal conditions and package. The IRF7811ATR has a fast switching speed, which is beneficial for high-frequency applications, and is housed in a TO-220 package that allows for efficient heat dissipation.
With its robust performance and reliability, the IRF7811ATR is commonly used in consumer electronics, automotive applications, and industrial systems where efficient power management is crucial. Always refer to the manufacturer’s datasheet for detailed electrical characteristics and application guidelines.
Key specifications include a maximum drain-source voltage (V_DSS) typically around 30V and a continuous drain current (I_D) of up to 55A, depending on the thermal conditions and package. The IRF7811ATR has a fast switching speed, which is beneficial for high-frequency applications, and is housed in a TO-220 package that allows for efficient heat dissipation.
With its robust performance and reliability, the IRF7811ATR is commonly used in consumer electronics, automotive applications, and industrial systems where efficient power management is crucial. Always refer to the manufacturer’s datasheet for detailed electrical characteristics and application guidelines.
Equivalent
The IRF7811ATR chip is typically replaced by similar MOSFET drivers like the MIC4427, TC4420, or the FAN3100. While exact specifications may vary, these alternatives can generally fulfill similar roles in driving MOSFETs in various applications. Always consult datasheets for precise compatibility regarding voltage, current ratings, and other specifications.
Features
The IRF7811ATR is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: 30V maximum drain-source voltage (VDS).
2. Current Rating: Continuous drain current of up to 75A, enabling high-load capacity.
3. Low On-Resistance: With a typical RDS(on) of 4.5 mΩ at VGS = 10V, it ensures minimal conduction losses.
4. Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency.
5. Thermal Performance: High thermal conductivity package supports effective heat dissipation.
6. Package Type: Available in a DPAK package for easy PCB mounting and improved thermal management.
7. Safe Operating Area: Designed to provide reliable operation under a wide range of conditions.
8. Drive Voltage: Can be driven by standard logic-level voltages, making it versatile for various applications.
These features make the IRF7811ATR ideal for applications like power converters, motor drives, and other high-efficiency switching circuits.
1. Voltage Rating: 30V maximum drain-source voltage (VDS).
2. Current Rating: Continuous drain current of up to 75A, enabling high-load capacity.
3. Low On-Resistance: With a typical RDS(on) of 4.5 mΩ at VGS = 10V, it ensures minimal conduction losses.
4. Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency.
5. Thermal Performance: High thermal conductivity package supports effective heat dissipation.
6. Package Type: Available in a DPAK package for easy PCB mounting and improved thermal management.
7. Safe Operating Area: Designed to provide reliable operation under a wide range of conditions.
8. Drive Voltage: Can be driven by standard logic-level voltages, making it versatile for various applications.
These features make the IRF7811ATR ideal for applications like power converters, motor drives, and other high-efficiency switching circuits.
Pinout
The IRF7811ATR is a dual N-channel MOSFET driver housed in an 8-pin SOIC package. It features a pin count of 8. The primary function of the IRF7811ATR is to drive power MOSFETs in various applications, including DC-DC converters, motor drivers, and other high-frequency switching applications.
The pin configuration is as follows:
1. Pin 1 (VDD): Supply voltage for the driver.
2. Pin 2 (GND): Ground reference.
3. Pin 3 (LO): Low-side gate drive output.
4. Pin 4 (HS): High-side switch connection.
5. Pin 5 (HO): High-side gate drive output.
6. Pin 6 (COM): Source connection for the high-side driver.
7. Pin 7 (SD): Shutdown input.
8. Pin 8 (CS): Current sense input.
The device is designed for high-speed operation and includes features such as fast rise and fall times, enabling efficient power conversion.
The pin configuration is as follows:
1. Pin 1 (VDD): Supply voltage for the driver.
2. Pin 2 (GND): Ground reference.
3. Pin 3 (LO): Low-side gate drive output.
4. Pin 4 (HS): High-side switch connection.
5. Pin 5 (HO): High-side gate drive output.
6. Pin 6 (COM): Source connection for the high-side driver.
7. Pin 7 (SD): Shutdown input.
8. Pin 8 (CS): Current sense input.
The device is designed for high-speed operation and includes features such as fast rise and fall times, enabling efficient power conversion.
Manufacturer
The IRF7811ATR is manufactured by Infineon Technologies AG, a prominent global semiconductor manufacturer. Infineon specializes in providing a wide range of products and solutions, including power semiconductors, microcontrollers, and sensor technologies. The company focuses on applications in automotive, industrial, and communication sectors, and is known for its innovations in power management and energy efficiency. Infineon was formed in 1999 as a spin-off from Siemens AG and has since grown to be a key player in the semiconductor industry, catering to various markets with cutting-edge technology and products.
Application
The IRF7811ATR is a high-side driver designed for driving N-channel MOSFETs or IGBTs in various applications. Key areas include:
1. Motor Control: Used in DC motor and stepper motor driving.
2. Power Management: Suitable for power supply circuits in converters and inverters.
3. LED Drivers: Employed in LED lighting applications for efficient drive control.
4. Automotive Systems: Utilized in automotive power distribution and load switching.
5. Industrial Automation: Applied in robotics and automation systems for controlling loads.
Its integrated features enhance efficiency and simplify circuitry in these applications.
1. Motor Control: Used in DC motor and stepper motor driving.
2. Power Management: Suitable for power supply circuits in converters and inverters.
3. LED Drivers: Employed in LED lighting applications for efficient drive control.
4. Automotive Systems: Utilized in automotive power distribution and load switching.
5. Industrial Automation: Applied in robotics and automation systems for controlling loads.
Its integrated features enhance efficiency and simplify circuitry in these applications.
Package
The IRF7811ATR is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for high-power applications.
