IRF7842TRPBF

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IRF7842TRPBF

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MOSFET N-CH 40V 18A 8SO

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF7842TRPBF

  • Лист данных IRF7842TRPBF DataSheet

  • Пакет SOIC-8

  • В наличии4070

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 18A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 5mOhm @ 17A, 10V
Vgs(th)(Max)@Id 2.25V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4500 pF @ 20 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SO

Обзор

Description

The IRF7842TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is part of the HEXFET® Power MOSFET series, which offers robust performance and reliability. The device features a low on-resistance, leading to minimized power loss and improved efficiency, making it suitable for applications such as DC-DC converters and synchronous rectification in power supplies.
Key specifications include a drain-to-source voltage (V_DS) rating of 40V and a continuous drain current (I_D) capability of up to 45A, making it capable of handling significant power loads. The IRF7842TRPBF is housed in a surface-mount SO-8 package, which is compact and suitable for high-density circuit board designs.
The "TRPBF" suffix indicates that the device is supplied in tape and reel format for automated assembly and is lead-free, complying with RoHS standards. Overall, the IRF7842TRPBF is a versatile MOSFET designed to deliver efficient power management in various electronic applications.

Equivalent

Equivalent products for the IRF7842TRPBF, a N-channel MOSFET, include:
1. IRF2804: Also an N-channel MOSFET with similar ratings.
2. IRF3708: Offers comparable performance characteristics.
3. FQP30N06L: Another N-channel MOSFET with similar specifications.
4. NXP PMV20XN: Matches in terms of voltage and current ratings.
5. STP55NF06: Provides similar voltage, current, and RDS(on) characteristics.
Always verify specifications and compatibility before using an equivalent.

Features

The IRF7842TRPBF is a HEXFET power MOSFET designed for high-efficiency applications. Key features include:
1. N-Channel MOSFET: Designed for optimal performance in N-channel configurations.
2. Low On-Resistance: Features a low R_DS(on), enhancing efficiency by reducing power loss during conduction.
3. High Current Capacity: Capable of handling substantial current loads, suitable for demanding environments.
4. Fast Switching Speed: Offers quick switching capabilities, which are ideal for high-frequency applications.
5. TO-252 Package: Comes in a D-Pak surface-mount package, facilitating easy integration into circuits with limited space.
6. RoHS Compliant: Environmentally friendly design that adheres to restrictions on hazardous substances.
7. Thermal Performance: Excellent thermal characteristics to manage heat dissipation effectively, ensuring reliability under high-power conditions.
These features make the IRF7842TRPBF suitable for applications like power management, DC-DC converters, and various automotive and industrial uses.

Pinout

The IRF7842TRPBF is a power MOSFET typically used in electronic applications requiring efficient high-speed switching and robust power handling capabilities. It comes in a surface-mount package known as SO-8, which features 8 pins. However, not all of these pins are used for separate functions; some are internally connected to the same part of the MOSFET for enhanced performance.
The primary functions of the pins are:
1. Drain (D): This is the terminal where the output current flows from the MOSFET. Multiple pins in the SO-8 package are connected to the drain to allow for better current handling capabilities.
2. Source (S): This is the terminal where the input current flows into the MOSFET. Similar to the drain, multiple pins are connected to the source.
3. Gate (G): This terminal controls the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source, allowing the MOSFET to act as a switch.
Typically, the exact pin configuration can vary slightly depending on the manufacturer, so it's crucial to refer to the specific datasheet for the IRF7842TRPBF for precise pin assignments and connections.

Manufacturer

The IRF7842TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company known for producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and other electronic components. The company serves various industries, including automotive, industrial, consumer electronics, and security, offering products that are integral to modern electronics and technology applications. Infineon's focus is on innovation and providing energy-efficient, reliable, and secure solutions to meet the demands of the digital age.

Application

The IRF7842TRPBF is a power MOSFET commonly used in applications requiring efficient power management and switching. Key application areas include:
1. DC-DC Converters: Utilized in power supplies for converting voltages efficiently.
2. Motor Control Circuits: Employed in driving motors in various electronic devices.
3. Load Switches: Acts as a switch for controlling power to different parts of a circuit.
4. Battery Management Systems: Used in charging and protection circuits.
5. Solar Inverters: Plays a role in converting solar power for electrical grids.
6. Telecommunications Equipment: Assists in power management for equipment stability.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.

Package

The IRF7842TRPBF is packaged in an industry-standard surface-mount type known as the D-Pak (TO-252). This package is designed for efficient heat dissipation and space-saving, suitable for automated assembly processes.

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