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IRF7862TRPBF
+БОМMOSFET N-CH 30V 21A 8SO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF7862TRPBF
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Лист данных IRF7862TRPBF DataSheet
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Пакет SO-8
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В наличии6329
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 21A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.7mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 45 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 4090 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
Обзор
Description
This MOSFET typically operates with a voltage rating around 30V and is capable of handling high current loads, often exceeding 80A, depending on the specific operating conditions and thermal management. Its fast switching capabilities enhance its suitability for use in DC-DC converters, motor drives, and other applications that require efficient power switching.
The IRF7862TRPBF comes in a surface-mounted package, usually a D2PAK or similar, which is designed to provide good thermal characteristics and ease of integration into printed circuit boards (PCBs). Its "TRPBF" suffix suggests it is lead-free and RoHS compliant, adhering to environmental regulations for electronic components.
Equivalent
Features
1. Type: N-Channel MOSFET.
2. Voltage Rating: It has a drain-source voltage (V_DS) of 30V.
3. Current Rating: Capable of handling a continuous drain current of up to 7.8A.
4. R_DS(on): Features a low on-resistance, typically around 9.5 mΩ, which enhances efficiency by reducing power loss.
5. Package: Available in a compact SO-8 package, making it suitable for space-constrained applications.
6. Applications: Commonly used in DC-DC converters, load switch applications, and other power management scenarios.
7. Thermal Performance: Designed for good thermal performance, allowing efficient heat dissipation.
8. Drive Voltage: Operates with a gate-source voltage (V_GS) up to ±20V.
These features make the IRF7862TRPBF suitable for various consumer electronics, computing, and telecom applications where efficient power management is critical.
Pinout
1. Pin 1 (Gate): This is the control terminal for the MOSFET, used to turn the device on and off.
2. Pins 2-3 (Source): These are the source terminals through which the current flows out of the MOSFET; typically connected to the negative side of the circuit or ground.
3. Pins 4-8 (Drain): These are the drain terminals where the current flows into the MOSFET from the positive side of the circuit.
This MOSFET is often used in applications like DC-DC converters, motor drives, and power management systems, where efficient switching is necessary. The IRF7862TRPBF is valued for its low on-resistance and fast switching characteristics, making it suitable for high-efficiency designs.
Manufacturer
Application
1. Power Management: Ideal for DC-DC converters and voltage regulation systems due to its efficiency.
2. Automotive Systems: Used in electronic control units (ECUs) and other automotive electronics.
3. Industrial Equipment: Functions in motor drives, power tools, and robotics.
4. Consumer Electronics: Supports power supply units in devices like TVs and computers.
5. Telecommunications: Helps in signal amplification and power distribution.
6. Renewable Energy: Utilized in solar inverters and energy storage systems.
Its low on-resistance and high-speed switching capabilities make it suitable for these demanding applications.