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IRF8707TRPBF
+БОМMOSFET N-CH 30V 11A 8SO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF8707TRPBF
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Лист данных IRF8707TRPBF DataSheet
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В наличии14492
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 11.9mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 9.3 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Обзор
Description
Key features of the IRF8707TRPBF include a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 62A. It is housed in a D-Pak (TO-252) package, which offers good thermal performance and compact size, making it suitable for space-constrained designs. The MOSFET also provides robustness against high transients and ensures reliability under various operating conditions.
Overall, the IRF8707TRPBF is favored for its balance of performance, efficiency, and reliability, making it a versatile choice for designers in the field of power electronics.
Equivalent
1. FDP6035AL - by ON Semiconductor
2. STP75NF75 - by STMicroelectronics
3. IPP075N15N3 G - by Infineon Technologies
4. NTD5867NL - by ON Semiconductor
Ensure that the substitute meets the specific requirements of your application, such as voltage, current, and thermal characteristics. Always refer to datasheets for detailed specifications and compatibility.
Features
1. N-Channel MOSFET: Suitable for a variety of switching purposes.
2. Low On-Resistance: Offers low RDS(on) for minimized conduction losses, enhancing efficiency.
3. High Current Capacity: Supports significant current loads, making it suitable for power-intensive applications.
4. Fast Switching Speed: Optimized for fast switching applications, which increases efficiency in switching circuits.
5. 100V Drain-Source Voltage: Can handle higher voltage applications.
6. Compact Package: Available in a surface-mount package (TRPBF variant), suitable for compact designs.
7. Environmentally Friendly: Lead-free package meeting RoHS standards.
These features make the IRF8707TRPBF ideal for use in applications such as power management, DC-DC converters, and motor drives, where efficiency and compact size are crucial.
Pinout
Here's a concise description of its pin functions:
1. Pins 1-3: Source (S) - These pins are internally connected and serve as the source terminal. They provide the path for current to leave the MOSFET.
2. Pin 4: Gate (G) - This pin controls the MOSFET. A voltage applied to the gate allows current to flow from the source to the drain.
3. Pins 5-8: Drain (D) - These pins are also internally connected and serve as the drain terminal. They provide the path for current to enter the MOSFET.
This MOSFET is designed for use in low-voltage applications such as DC-DC converters and synchronous rectification in power supplies. It features low on-resistance and fast switching capabilities, making it efficient for these purposes.
Manufacturer
Application
1. DC-DC Converters: Used in power supply circuits for converting DC voltages efficiently.
2. Load Switching: Suitable for switching loads in power management applications.
3. Motor Drives: Utilized in controlling motors in industrial and automotive systems.
4. Uninterruptible Power Supplies (UPS): Helps in battery management and power conversion.
5. Telecommunications Equipment: Plays a role in supporting power regulation and distribution.
6. Consumer Electronics: Used in power regulation for devices like TVs and audio equipment.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power electronics.