IRF9Z24NPBF

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IRF9Z24NPBF

+БОМ

MOSFET P-CH 55V 12A TO220AB

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF9Z24NPBF

  • Лист данных IRF9Z24NPBF DataSheet

  • Пакет TO-220-3

  • В наличии5502

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Спецификации

Атрибут Ценность
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 175mOhm @ 7.2A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 19 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Обзор

Description

The IRF9Z24NPBF is a P-channel MOSFET from Infineon, designed for low-voltage, high-efficiency switching applications. Key features:
- Voltage Rating: -55V (Drain-to-Source, VDS).
- Current Rating: -19A (Continuous Drain Current, ID).
- Low On-Resistance: 50mΩ (max at VGS = -10V), reducing conduction losses.
- Fast Switching: Optimized for high-speed applications (e.g., power supplies, motor control).
- Logic-Level Gate Drive: Compatible with -10V gate drive (VGS).
Packaged in TO-220AB, it offers robust thermal performance. Common uses include DC-DC converters, battery management, and load switching.
Advantages: Low power dissipation, compact design, and reliable performance in switching circuits.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRF9Z24NPBF (P-channel MOSFET, -55V, -19A, 0.077Ω) include:
- IRF9Z24N (same specs, different packaging)
- IRF9Z34NPBF (higher voltage, -55V, -12A, 0.18Ω)
- IRF4905PBF (-55V, -74A, 0.02Ω)
- STP9PF06 (-60V, -9A, 0.25Ω)
- FQP9P25 (-55V, -9A, 0.25Ω)
Check datasheets for exact compatibility.

Pinout

The IRF9Z24NPBF is a P-channel MOSFET in a TO-220 package with 3 pins (Gate, Drain, Source).
Key Specifications:
- Voltage (VDSS): -60V
- Current (ID): -19A (continuous)
- RDS(on): 0.055Ω (max at VGS = -10V)
- Gate Threshold (VGS(th)): -2V to -4V
Pin Functions:
1. Gate (G): Controls conduction.
2. Drain (D): Connects to load (negative side for P-channel).
3. Source (S): Connects to power supply (negative rail).
Commonly used in power switching, inverters, and motor control. Requires a negative gate voltage to turn on.

Application

The IRF9Z24NPBF, a P-channel MOSFET, is commonly used in:
1. Power Management – Switching and regulation in DC-DC converters, battery protection circuits.
2. Motor Control – Driving small motors in automotive and industrial systems.
3. Load Switching – Efficiently turning high-current loads on/off in power supplies.
4. Automotive Electronics – Used in 12V/24V systems for relays, solenoids, and LED drivers.
5. Portable Devices – Power distribution in laptops, tablets, and other battery-operated gadgets.
Its low on-resistance (RDS(on)) and high current handling (up to 19A) make it suitable for energy-efficient applications.

Package

The IRF9Z24NPBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for its robustness, ease of mounting, and efficient heat dissipation. It features three leads (gate, drain, source) and is suitable for high-power applications. The TO-220AB package is a standard choice for power transistors and regulators.

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