IRFB4615PBF

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IRFB4615PBF

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IRFB4615 - 12V-300V N-CHANNEL PO

  • ПроизводительМеждународный исправитель

  • Мфр. Часть #IRFB4615PBF

  • Лист данных IRFB4615PBF DataSheet

  • Пакет TO-220-3

  • В наличии7060

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Спецификации

Атрибут Ценность
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain(Id) @ 25°C 35A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 39mOhm @ 21A, 10V
Vgs(th)(Max) @ Id 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 26 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1750 pF @ 50 V
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Обзор

Description

The IRFB4615PBF is a power MOSFET designed for high-efficiency switching applications. It is manufactured by Infineon Technologies and belongs to the HEXFET® family, known for its ruggedness and reliability. Key features of the IRFB4615PBF include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 130A. It operates with a low on-resistance (R_DS(on)) of approximately 4.5 milliohms, minimizing energy loss during operation. The device is housed in a TO-220 package, which offers relatively good heat dissipation and is widely used in power electronics.
The IRFB4615PBF is commonly used in applications such as power supplies, motor drives, and DC-DC converters. Its fast switching speed and high current capabilities make it suitable for high-frequency applications. Additionally, its lead-free packaging aligns with environmental standards like RoHS, making it an eco-friendly choice. Overall, the IRFB4615PBF is a versatile and efficient component for various high-power electronic applications.

Equivalent

The IRFB4615PBF is a N-channel MOSFET commonly used in power switching applications. Equivalent products include:
1. STMicroelectronics STP36NF06
2. ON Semiconductor NTP65N25
3. NXP PSMN3R0-30YLD
4. Infineon IPB65R045C7
These equivalents may vary slightly in specifications, so always compare datasheets to ensure compatibility with your specific application requirements.

Features

The IRFB4615PBF is a power MOSFET designed by Infineon Technologies, commonly used for high-performance applications. Key features include:
1. N-Channel MOSFET: It is an N-channel MOSFET, which is typically used for switching and amplification.
2. Voltage and Current Ratings: The device can handle a maximum drain-source voltage (V_DS) of 150V and has a continuous drain current (I_D) rating of around 75A.
3. Low On-Resistance: It features a low R_DS(on) of approximately 0.027 ohms, which improves efficiency by minimizing power losses during operation.
4. High-Speed Switching: The MOSFET is designed for fast switching speeds, which is beneficial for applications requiring rapid switching cycles.
5. Thermal Resistance: It has a low thermal resistance, aiding in heat dissipation and allowing it to handle high power levels.
6. RoHS Compliant: The IRFB4615PBF is RoHS compliant, making it environmentally friendly by restricting hazardous materials.
These features make the IRFB4615PBF suitable for a variety of applications, including power supplies, converters, and motor drives.

Pinout

The IRFB4615PBF is a power MOSFET designed by Infineon Technologies. It typically comes in a TO-220 package, which has three pins. Here is the pin configuration and function for each pin:
1. Gate (G): This is the control terminal of the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): The drain is the terminal where the current flows out of the MOSFET. In N-channel MOSFETs like the IRFB4615PBF, the drain is connected to the more positive side of the circuit when the MOSFET is in operation.
3. Source (S): The source is the terminal where the current enters the MOSFET. It is typically connected to the ground or the more negative side of the circuit in N-channel MOSFETs.
The IRFB4615PBF is used in high-efficiency switching applications due to its ability to handle high voltages and currents with low on-resistance.

Manufacturer

The IRFB4615PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in designing and producing various semiconductor solutions. The company focuses on automotive, industrial, and multimarket systems, providing products such as microcontrollers, power semiconductors, sensors, and security ICs. Infineon is known for its commitment to innovation and sustainability, often providing solutions that enhance energy efficiency and connectivity.

Application

The IRFB4615PBF is a power MOSFET commonly used in applications requiring high efficiency and fast switching. Typical application areas include:
1. Switching Power Supplies: Used for efficient power conversion in SMPS.
2. Motor Drives: Suitable for driving motors in industrial and automotive applications.
3. DC-DC Converters: Facilitates voltage regulation and conversion.
4. Inverters: Used in solar inverters and UPS systems for power conversion.
5. LED Drivers: Ensures efficient LED lighting control.
6. Audio Amplifiers: Utilized in high-power audio amplifier circuits.
7. Battery Management Systems: Supports efficient battery charging and management.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.

Package

The IRFB4615PBF is packaged in a TO-220AB type, which is a standard through-hole package commonly used for power MOSFETs. It is designed to handle significant power dissipation with a heat sink and facilitates easy mounting on PCBs for various electronic applications.

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