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IRFB4620PBF
+БОМIRFB4620 - 12V-300V N-CHANNEL PO
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ПроизводительМеждународный исправитель
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Мфр. Часть #IRFB4620PBF
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В наличии9126
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 72.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1710 pF @ 50 V |
| Power Dissipation (Max) | 144W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Обзор
Description
This component is part of the HEXFET® Power MOSFET series, known for low on-resistance and high-speed switching capabilities. The IRFB4620PBF is often used in power supplies, motor drives, and other applications where energy efficiency and high performance are crucial. Additionally, it is lead-free and RoHS compliant, reflecting its compliance with environmental standards. Overall, the IRFB4620PBF offers a robust solution for engineers looking to optimize performance in power management systems.
Equivalent
1. STMicroelectronics STP60NF06 - Similar current and voltage ratings.
2. ON Semiconductor FDP047N10 - Offers comparable performance in power switching.
3. Infineon IPP60R199CP - Suitable alternative with similar characteristics.
4. Vishay SIHF40N60E - Generally used in similar applications.
Ensure to cross-verify electrical specifications and thermal characteristics for compatibility with your application.
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage of 200V and can handle continuous drain current up to 70A, making it suitable for various power management applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_DS(on)) of 0.027 ohms, reducing power loss and enhancing efficiency.
3. Thermal Performance: It offers good thermal performance with a maximum junction temperature of 175°C, ensuring reliability under high-temperature operations.
4. Fast Switching: The device supports rapid switching speeds, which is beneficial for switching power supplies and motor control.
5. TO-220 Package: It is housed in a TO-220 package, providing ease of mounting and effective heat dissipation.
6. RoHS Compliant: The IRFB4620PBF is environmentally friendly, meeting RoHS standards for lead-free components.
These features make the IRFB4620PBF an excellent choice for applications involving high voltage and high current, such as inverters, motor drives, and power converters.
Pinout
The pin count for the IRFB4620PBF is three. Here are the functions of each pin:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the load is connected. The current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
These pins are configured in a TO-220 package, which is a common configuration used for discrete semiconductors. The IRFB4620PBF features low on-state resistance and high-speed switching capabilities, making it suitable for applications such as motor drives, power supplies, and inverters.
Manufacturer
Application
1. Switching Power Supplies: Used for its efficiency in converting power with minimal losses.
2. Motor Drives: Provides precise control in motor applications such as industrial machines and electric vehicles.
3. Inverters: Utilized in solar inverters and UPS systems for effective energy conversion.
4. DC-DC Converters: Employed in various electronic devices for voltage level conversion.
5. Audio Amplifiers: Used to achieve high-quality sound output with efficient power handling.
These applications benefit from the MOSFET's ability to handle high voltages and currents while maintaining a compact form factor.