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IRFD110PBF
+БОМMOSFET N-CH 100V 1A 4DIP
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRFD110PBF
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Лист данных IRFD110PBF DataSheet
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В наличии4270
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Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Base Product Number | IRFD110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package | 4-DIP (0.300", 7.62mm) |
| Packaging | Tube |
Обзор
Features
- Voltage Rating: 100V (Drain-Source, VDSS)
- Current Rating: 0.9A (Continuous Drain Current, ID)
- Low On-Resistance: 6Ω (RDS(on)) at VGS = 10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Low Threshold Voltage: VGS(th)- Package: TO-252 (DPAK), surface-mount
- Applications: Low-power switching, DC-DC converters, and load control
Compact and efficient, it’s suited for low-voltage, high-speed circuits.
Pinout
Pin Functions:
1. Pins 1, 2, 3, 6, 7, 8 – Drain (D) terminals for the two MOSFETs (each MOSFET has three drain pins connected internally).
2. Pin 4 – Gate (G) of MOSFET 1.
3. Pin 5 – Gate (G) of MOSFET 2.
4. Source (S) – The metal tab serves as the common source for both MOSFETs.
Key Features:
- VDSS: 100V
- ID: 0.8A (each)
- Low threshold voltage (VGS(th)) for logic-level drive.
Used in switching applications, amplifiers, and motor control.
Application
1. Switching Power Supplies – Efficient power conversion.
2. Motor Control – Drives small DC motors.
3. DC-DC Converters – Voltage regulation.
4. Relay/Driver Circuits – Fast switching applications.
5. Automotive Electronics – Low-side switching.
Its low on-resistance and fast switching make it suitable for low-voltage (up to 100V) and high-efficiency applications.
Frequently Asked Questions
Q: What is the maximum drain-source voltage for the IRFD110PBF?
A: The maximum drain-source voltage (Vdss) is 100 V, suitable for low-voltage power switching applications.
Q: Can this MOSFET handle continuous current at room temperature?
A: Yes, it supports a continuous drain current of 1A (Id) at 25°C case temperature.
Q: What is the typical on-resistance for this N-Channel MOSFET?
A: The maximum Rds(on) is 540mOhm at Vgs = 10V and Id = 600mA, ensuring efficient low-current switching.
Q: What is the maximum gate threshold voltage?
A: The maximum Vgs(th) is 4V at Id = 250μA, requiring a logic-level drive of at least 10V for full enhancement.
Q: What is the power dissipation limit for the IRFD110PBF?
A: Max power dissipation is 1.3W (Ta), requiring thermal management for high-duty-cycle operations.
Q: Is this component through-hole or surface mount?
A: It is a through-hole device, packaged in a 4-DIP (7.62mm pitch), ideal for prototyping or traditional PCB layouts.
Q: What is the operating temperature range?
A: Operating junction temperature ranges from -55°C to 175°C, suitable for harsh environments.
