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IRFD9120
+БОМMOSFET P-CH 100V 1A 4DIP
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRFD9120
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Лист данных IRFD9120 DataSheet
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В наличии6636
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9120 |
Обзор
Description
IRFD9120 is a course designed to provide students with a comprehensive understanding of International Relations and Foreign Policy Decision-Making. It explores key theories and concepts in international relations, such as realism, liberalism, and constructivism, while examining the dynamics of state behavior, non-state actors, and global governance.
The course emphasizes the decision-making processes behind foreign policy, analyzing how domestic politics, international pressures, and historical contexts influence decisions made by states. Students engage in case studies, simulations, and critical discussions to develop analytical skills and apply theoretical frameworks to real-world scenarios.
Key topics may include diplomacy, conflict resolution, international security, and the role of international organizations. By the end of the course, students are expected to critically evaluate foreign policy decisions and understand the complexities of global interactions. This foundational knowledge prepares them for further studies or careers in international relations, diplomacy, or related fields.
The course emphasizes the decision-making processes behind foreign policy, analyzing how domestic politics, international pressures, and historical contexts influence decisions made by states. Students engage in case studies, simulations, and critical discussions to develop analytical skills and apply theoretical frameworks to real-world scenarios.
Key topics may include diplomacy, conflict resolution, international security, and the role of international organizations. By the end of the course, students are expected to critically evaluate foreign policy decisions and understand the complexities of global interactions. This foundational knowledge prepares them for further studies or careers in international relations, diplomacy, or related fields.
Equivalent
The IRFD9120 is a N-channel MOSFET commonly used in power applications. Equivalent products include the STP16NF06, FDS6690, and BSS139. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.
Features
The IRFD9120 is a N-channel MOSFET designed for various applications, including power management and switching tasks. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: Supports continuous drain current (Id) of up to 40A, suitable for high-power applications.
3. Low On-Resistance: Offers a low Rds(on), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: Operates at a low gate threshold voltage, enabling easier driving with lower voltage levels.
5. Fast Switching Speed: Features rapid switching capabilities, making it ideal for high-frequency applications.
6. Package Options: Available in various packages, including TO-220, enhancing thermal performance and ease of integration.
7. Temperature Range: Operates effectively across a broad temperature range, ensuring reliability in diverse environments.
These features make the IRFD9120 suitable for applications in power supplies, motor drives, and other electronic circuits that require efficient and reliable switching.
1. Voltage Rating: Typically rated for a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: Supports continuous drain current (Id) of up to 40A, suitable for high-power applications.
3. Low On-Resistance: Offers a low Rds(on), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: Operates at a low gate threshold voltage, enabling easier driving with lower voltage levels.
5. Fast Switching Speed: Features rapid switching capabilities, making it ideal for high-frequency applications.
6. Package Options: Available in various packages, including TO-220, enhancing thermal performance and ease of integration.
7. Temperature Range: Operates effectively across a broad temperature range, ensuring reliability in diverse environments.
These features make the IRFD9120 suitable for applications in power supplies, motor drives, and other electronic circuits that require efficient and reliable switching.
Pinout
The IRFD9120 is an N-channel MOSFET designed for high-speed switching applications. It comes in a TO-220 package with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin receives the control voltage that turns the MOSFET on or off. A positive voltage relative to the source allows current to flow from drain to source.
2. Drain (D): This pin is the output where the high-side load is connected. It allows current to flow to the load when the device is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. It provides a return path for the current flowing from the drain.
The IRFD9120 is characterized by its low on-resistance and fast switching times, making it suitable for various applications, including power management and motor control.
1. Gate (G): This pin receives the control voltage that turns the MOSFET on or off. A positive voltage relative to the source allows current to flow from drain to source.
2. Drain (D): This pin is the output where the high-side load is connected. It allows current to flow to the load when the device is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. It provides a return path for the current flowing from the drain.
The IRFD9120 is characterized by its low on-resistance and fast switching times, making it suitable for various applications, including power management and motor control.
Manufacturer
The IRFD9120 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in a wide range of products including power semiconductors, microcontrollers, sensors, and integrated circuits. The company serves various industries, including automotive, industrial, and consumer electronics. Infineon is known for its focus on innovative solutions in areas such as energy efficiency, mobility, and security, playing a significant role in advancing technologies like electric vehicles, renewable energy, and the Internet of Things (IoT).
Application
The IRFD9120 is a N-channel MOSFET primarily used in applications such as power management, motor control, and switching power supplies. Its features make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial automation. Additionally, it is utilized in LED drivers, DC-DC converters, and other power conversion applications, where low on-resistance and fast switching capabilities enhance performance and reliability.
Package
The IRFD9120 is typically available in a TO-220 package type. This package is known for its good thermal performance and is commonly used for power MOSFETs in various applications.
