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IRFH5015TRPBF
+БОМMOSFET N-CH 150V 10A/56A 8PQFN
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRFH5015TRPBF
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Лист данных IRFH5015TRPBF DataSheet
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В наличии4905
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 34A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | IRFH5015 |
Обзор
Description
The device features advanced thermal and electrical performance, which enhances reliability and efficiency in power conversion tasks. Its compact design allows for integration into space-constrained applications, while its robust construction ensures durability under varying environmental conditions.
Common applications include DC-DC converters, battery management systems, and motor control circuits, where precise control over power flow is critical. Overall, IRFH5015TRPBF is valued for its performance in enhancing energy efficiency and enabling reliable operation in demanding applications.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain currents (I_D) of up to 50A, enhancing its usability in demanding circuits.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of about 10 milliohms, which minimizes power loss and improves efficiency.
4. Fast Switching: The MOSFET offers high-speed switching capabilities, ideal for applications like power supplies and motor control.
5. Thermal Performance: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy integration with various driving circuits.
These features make the IRFH5015TRPBF suitable for a wide range of applications in power electronics and automotive systems.
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where current flows out when the device is on.
3. Source (S) - The terminal where current enters when the device is conducting.
4. Tab - Internally connected to the drain; often used for heat sinking.
The MOSFET is designed for high current and voltage applications, featuring low on-resistance and fast switching capabilities, making it suitable for power management, DC-DC converters, and motor control applications. The "TRPBF" suffix indicates that it is RoHS compliant and is packaged in a surface-mount SO-8 package.
Manufacturer
Application
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Switching Power Supplies: Enhancing efficiency and thermal management.
3. Motor Control: Used in driving applications for electric motors.
4. LED Drivers: In facilitating efficient power delivery to LED lighting systems.
5. Battery Management Systems: For efficient switching in charging circuits.
6. Audio Amplifiers: In class D amplifier implementations for improved power efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.