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IRFH8202TRPBF
+БОМMOSFET N-CH 25V 47A/100A 8PQFN
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRFH8202TRPBF
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Лист данных IRFH8202TRPBF DataSheet
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Пакет PQFN-8
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В наличии6846
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain(Id) @ 25°C | 47A (Ta), 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.05mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 7174 pF @ 13 V |
| Power Dissipation (Max) | 3.6W (Ta), 160W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Обзор
Description
The IRFH8202TRPBF is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It is produced by Infineon Technologies and is part of their HEXFET® Power MOSFET series. This component is specifically engineered for use in high-efficiency power conversion, offering low on-resistance and fast switching capabilities, which contribute to reduced energy losses.
Key features of the IRFH8202TRPBF include:
- N-Channel Configuration: It operates in an n-channel mode, which is suitable for high power and high-speed applications.
- Low On-Resistance: This reduces energy loss and improves efficiency.
- Compact Package: Typically available in a small PowerPAK® package, which is beneficial for space-constrained designs.
- Thermal Efficiency: Designed for efficient heat dissipation, reducing thermal management concerns.
This MOSFET is commonly used in applications such as DC-DC converters, motor drives, and power supplies, where efficiency and compact size are crucial. It is favored in designs requiring high power density and reliability.
Key features of the IRFH8202TRPBF include:
- N-Channel Configuration: It operates in an n-channel mode, which is suitable for high power and high-speed applications.
- Low On-Resistance: This reduces energy loss and improves efficiency.
- Compact Package: Typically available in a small PowerPAK® package, which is beneficial for space-constrained designs.
- Thermal Efficiency: Designed for efficient heat dissipation, reducing thermal management concerns.
This MOSFET is commonly used in applications such as DC-DC converters, motor drives, and power supplies, where efficiency and compact size are crucial. It is favored in designs requiring high power density and reliability.
Equivalent
The IRFH8202TRPBF is a power MOSFET, and its equivalent products can include similar N-channel MOSFETs with comparable specifications. Some equivalents are:
1. IRFH8310 - A product from the same manufacturer with close specifications.
2. BSC052N04LS - Infineon Technologies' MOSFET with similar ratings.
3. FDMS86101 - From ON Semiconductor, offering similar performance.
4. NTMFS4935NFL - A N-channel MOSFET by ON Semiconductor.
Always ensure compatibility by checking the datasheets for electrical specifications and package type.
1. IRFH8310 - A product from the same manufacturer with close specifications.
2. BSC052N04LS - Infineon Technologies' MOSFET with similar ratings.
3. FDMS86101 - From ON Semiconductor, offering similar performance.
4. NTMFS4935NFL - A N-channel MOSFET by ON Semiconductor.
Always ensure compatibility by checking the datasheets for electrical specifications and package type.
Features
The IRFH8202TRPBF is a HEXFET power MOSFET designed by Infineon Technologies. It features a compact DirectFET package, which offers superior thermal performance and efficiency. Key specifications include a maximum drain-source voltage (V_ds) of 25V and a continuous drain current (I_d) of up to 34A, making it suitable for high-current applications. It has an R_ds(on) value of 3.1mΩ, contributing to reduced conduction losses.
The MOSFET supports fast switching speeds, enhancing overall efficiency in switching applications like DC-DC converters. The device also features a low gate charge, which minimizes driving losses. The DirectFET package allows for efficient heat dissipation, enabling higher power density and reducing the need for extensive cooling solutions.
The IRFH8202TRPBF is typically used in applications such as synchronous rectification in buck converters, motor control, and power management in computing and telecommunications. It combines high performance with reliability, making it a popular choice for engineers designing power electronics systems.
The MOSFET supports fast switching speeds, enhancing overall efficiency in switching applications like DC-DC converters. The device also features a low gate charge, which minimizes driving losses. The DirectFET package allows for efficient heat dissipation, enabling higher power density and reducing the need for extensive cooling solutions.
The IRFH8202TRPBF is typically used in applications such as synchronous rectification in buck converters, motor control, and power management in computing and telecommunications. It combines high performance with reliability, making it a popular choice for engineers designing power electronics systems.
Pinout
The IRFH8202TRPBF is a power MOSFET typically used in various electronic applications, including power management and conversion. This device is housed in a PQFN (Power Quad Flat No-Lead) package, which aids in efficient heat dissipation and compact design.
Pin Count and Configuration:
1. Pin Count: The IRFH8202TRPBF has a total of 8 pins.
2. Function of Key Pins:
- Gate (G): The gate is the control terminal that modulates the device.
- Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state.
- Source (S): The source is the terminal through which current enters the device when it is in the conductive state.
The exact configuration and allocation of these pins can vary slightly depending on the precise layout of the package, so it's essential to refer to the manufacturer's datasheet for detailed pin configurations and electrical characteristics.
Pin Count and Configuration:
1. Pin Count: The IRFH8202TRPBF has a total of 8 pins.
2. Function of Key Pins:
- Gate (G): The gate is the control terminal that modulates the device.
- Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state.
- Source (S): The source is the terminal through which current enters the device when it is in the conductive state.
The exact configuration and allocation of these pins can vary slightly depending on the precise layout of the package, so it's essential to refer to the manufacturer's datasheet for detailed pin configurations and electrical characteristics.
Manufacturer
The IRFH8202TRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that develops and produces a variety of semiconductor solutions. It provides products for applications in the automotive industry, industrial power control, power management & multimarket, and digital security solutions. The company is known for its innovation in power electronics, automotive microcontrollers, and security ICs, among other areas. Infineon acquired International Rectifier in 2015, which expanded its portfolio in the power management sector, including products like the IRFH8202TRPBF.
Application
The IRFH8202TRPBF is a Power MOSFET optimized for applications requiring high efficiency and power density. Key application areas include:
1. DC-DC Converters: Utilized in buck, boost, and synchronous rectification configurations to enhance power conversion efficiency.
2. Motor Drives: Suitable for driving motors in industrial, automotive, and consumer electronics settings.
3. Power Management: Employed in power management circuits for computing and telecom devices.
4. Battery Management: Used in battery protection and management circuits.
5. Load Switches: Functions as a switch for controlling power to various loads in electronics.
6. LED Drivers: Applied in high-efficiency LED lighting systems for current regulation.
These applications benefit from its low on-resistance and fast switching capabilities.
1. DC-DC Converters: Utilized in buck, boost, and synchronous rectification configurations to enhance power conversion efficiency.
2. Motor Drives: Suitable for driving motors in industrial, automotive, and consumer electronics settings.
3. Power Management: Employed in power management circuits for computing and telecom devices.
4. Battery Management: Used in battery protection and management circuits.
5. Load Switches: Functions as a switch for controlling power to various loads in electronics.
6. LED Drivers: Applied in high-efficiency LED lighting systems for current regulation.
These applications benefit from its low on-resistance and fast switching capabilities.
Package
The IRFH8202TRPBF is packaged in a PQFN (Power Quad Flat No-Lead) package, specifically a 5x6 mm size. This type of packaging is designed for efficient thermal performance and compact size, making it suitable for high-density applications.
