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IRFP22N50A
+БОМMOSFET N-CH 500V 22A TO247-3
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRFP22N50A
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В наличии8343
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 230mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3450 pF @ 25 V |
| PowerDissipation(Max) | 277W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
| Package/Case | TO-247-3 |
| BaseProductNumber | IRFP22 |
Обзор
Description
The IRFP22N50A is a N-channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 22A at a case temperature of 25°C. This device is ideal for use in power management, switching applications, and motor control due to its low on-resistance (R_DS(on)) of approximately 0.24 ohms, which helps minimize power loss during operation.
The IRFP22N50A is housed in a TO-220 packaging, making it suitable for heat dissipation and allowing for efficient thermal management. It has a fast switching speed, enabling it to handle high frequencies in circuit applications. Key parameters include a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, making it compatible with various gate drive voltages.
Overall, the IRFP22N50A is a versatile component widely used in power supplies, inverters, and various industrial applications where high voltage and efficiency are required.
The IRFP22N50A is housed in a TO-220 packaging, making it suitable for heat dissipation and allowing for efficient thermal management. It has a fast switching speed, enabling it to handle high frequencies in circuit applications. Key parameters include a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, making it compatible with various gate drive voltages.
Overall, the IRFP22N50A is a versatile component widely used in power supplies, inverters, and various industrial applications where high voltage and efficiency are required.
Equivalent
Equivalent products to the IRFP22N50A MOSFET include the STP22NF50, FQP22N50, and MTP22N50. These alternatives share similar voltage and current ratings, making them suitable replacements in various applications. Always check the specific parameters, such as R_DS(on) and V_GS(th), to ensure compatibility in your circuit.
Features
The IRFP22N50A is a high-voltage N-channel MOSFET designed for efficient switching applications. Its key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Provides a continuous drain current (I_D) of 22A at a case temperature of 25°C.
3. R_DS(on): Features a low on-resistance of about 0.5Ω, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive in various circuits.
5. Power Dissipation: Capable of handling a maximum power dissipation of 94W, depending on thermal management.
6. Fast Switching: Designed for fast switching speeds, making it suitable for applications in power inverters, motor drivers, and power supplies.
This MOSFET is commonly used in high-efficiency power conversion and control systems.
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Provides a continuous drain current (I_D) of 22A at a case temperature of 25°C.
3. R_DS(on): Features a low on-resistance of about 0.5Ω, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive in various circuits.
5. Power Dissipation: Capable of handling a maximum power dissipation of 94W, depending on thermal management.
6. Fast Switching: Designed for fast switching speeds, making it suitable for applications in power inverters, motor drivers, and power supplies.
This MOSFET is commonly used in high-efficiency power conversion and control systems.
Pinout
The IRFP22N50A is a high-voltage N-channel MOSFET with a total of three pins.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET's operation. Applying a voltage between the gate and source turns the device on, allowing current to flow from the drain to the source.
2. Drain (D) - This is the terminal through which the main output current flows. It connects to the load.
3. Source (S) - This terminal is the return path for the current flowing through the MOSFET. It is typically connected to ground in most applications.
The IRFP22N50A is rated for a maximum drain-source voltage (V_DS) of 500V and can handle a continuous drain current (I_D) of up to 22A. It is commonly used in power applications, such as switching power supplies and motor drives.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET's operation. Applying a voltage between the gate and source turns the device on, allowing current to flow from the drain to the source.
2. Drain (D) - This is the terminal through which the main output current flows. It connects to the load.
3. Source (S) - This terminal is the return path for the current flowing through the MOSFET. It is typically connected to ground in most applications.
The IRFP22N50A is rated for a maximum drain-source voltage (V_DS) of 500V and can handle a continuous drain current (I_D) of up to 22A. It is commonly used in power applications, such as switching power supplies and motor drives.
Manufacturer
The IRFP22N50A is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon specializes in developing and producing a wide range of semiconductor solutions, including power management, automotive electronics, industrial power control, and sensor technologies. The company is known for its innovation in power semiconductors, which are essential in applications such as renewable energy systems, electric vehicles, and efficient power supplies. With a strong focus on sustainability and technological advancement, Infineon serves a diverse array of industries, helping to drive the transition towards a more energy-efficient and connected world.
Application
The IRFP22N50A is a N-channel MOSFET commonly used in various applications, including:
1. Power Conversion: Ideal for switching power supplies and DC-DC converters due to its high voltage and current handling capabilities.
2. Motor Control: Suitable for driving DC motors in robotics and industrial applications.
3. Lighting Control: Used in LED drivers and dimmers for efficient lighting solutions.
4. Inverters: Employed in inverter circuits for renewable energy systems, such as solar inverters.
5. Audio Amplifiers: Acts in high-power audio amplification for enhanced sound quality.
6. Switching Applications: Functions in high-speed switching circuits for various electronic devices.
1. Power Conversion: Ideal for switching power supplies and DC-DC converters due to its high voltage and current handling capabilities.
2. Motor Control: Suitable for driving DC motors in robotics and industrial applications.
3. Lighting Control: Used in LED drivers and dimmers for efficient lighting solutions.
4. Inverters: Employed in inverter circuits for renewable energy systems, such as solar inverters.
5. Audio Amplifiers: Acts in high-power audio amplification for enhanced sound quality.
6. Switching Applications: Functions in high-speed switching circuits for various electronic devices.
Package
The IRFP22N50A is typically packaged in a TO-220 format. This package type features a metal tab for heat dissipation and is designed for easy mounting on heatsinks, making it suitable for high-power applications.
