Изображения являются только для ссылки
IRG4PF50WPBF
+БОМIGBT 900V 51A 200W TO247AC
-
Производителькомпанией Infineon Technologies
-
Мфр. Часть #IRG4PF50WPBF
-
Лист данных IRG4PF50WPBF DataSheet
-
Пакет TO-247-3
-
В наличии7350
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown(Max) | 900 V |
| Current - Collector(Ic)(Max) | 51 A |
| Current - Collector Pulsed(Icm) | 204 A |
| Vce(on)(Max) @ Vge Ic | 2.7V @ 15V, 28A |
| Power - Max | 200 W |
| Switching Energy | 190µJ (on), 1.06mJ (off) |
| Input Type | Standard |
| Gate Charge | 160 nC |
| Td(on / off) @ 25°C | 29ns/110ns |
| Test Condition | 720V, 28A, 5Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Обзор
Equivalent
- IRG4PC50WPBF (600V, 55A)
- IRG4PC50UDPBF (600V, 55A, Ultrafast)
- STGW40H60DF (600V, 40A, STMicro)
- FGA40N60SMD (600V, 40A, Fairchild/ON Semi)
- HGTG40N60B3 (600V, 75A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 500V (VCES)
- Current Rating: 44A (IC @ 25°C)
- Low VCE(sat): 1.65V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (10µs)
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (isolated tab for easier mounting)
- Applications: Motor drives, inverters, UPS, and welding equipment
It combines low switching losses with high efficiency, making it suitable for power electronics.
Manufacturer
The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications.
