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IRLIZ44NPBF
+БОМMOSFET N-CH 55V 30A TO220AB FP
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRLIZ44NPBF
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Лист данных IRLIZ44NPBF DataSheet
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Пакет TO-220
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В наличии1723
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 22mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 48 nC @ 5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB Full-Pak |
Обзор
Description
Key features of the IRLIZ44NPBF include:
1. N-Channel MOSFET: It allows current to flow when a positive voltage is applied to the gate terminal relative to the source terminal.
2. Low On-Resistance: Provides efficient current conduction with minimal power loss.
3. High Current Capacity: Capable of handling significant current loads, making it suitable for high-power applications.
4. Enhanced Switching Speed: Facilitates rapid transition between the on and off states, improving performance in dynamic systems.
5. Lead-Free: The PBF suffix indicates it is free from lead, aligning with RoHS compliance for environmental safety.
These attributes make the IRLIZ44NPBF an ideal choice for engineers and designers dealing with power control in automotive, industrial, and consumer electronics.
Equivalent
1. IRLZ44N - Similar specifications but ensure compatibility with your circuit requirements.
2. STP55NF06- N-channel MOSFET with similar voltage and current ratings.
3. FQP50N06- Another N-channel MOSFET, comparable in performance.
4. IRFZ44N - Commonly used equivalent with comparable specs.
Always verify the datasheet specifications for full compatibility with your application.
Features
1. N-Channel MOSFET: It is designed to conduct when a positive voltage is applied to the gate, relative to the source terminal.
2. Voltage and Current Ratings: Typically, these components have specific maximum ratings for voltage and current, ensuring compatibility with certain power levels in circuits.
3. Low On-Resistance: This feature ensures efficiency by minimizing power loss during the MOSFET's conduction state.
4. Thermal Performance: It is designed to handle certain levels of power dissipation, often with a specified thermal resistance.
5. Fast Switching Speed: Suitable for applications requiring quick transitions between on and off states, improving efficiency in power conversion and management applications.
6. Robust Design: Often includes features for enhanced reliability, such as over-temperature protection and avalanche ruggedness.
These features make the IRLIZ44NPBF suitable for various applications, including power management systems, motor controllers, and high-efficiency power supplies.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source by creating an electric field that affects the conductivity of the device.
2. Drain (D): The drain is the terminal where the load current enters the MOSFET when it is in the "on" state. It is connected to the high-side of the load.
3. Source (S): The source is the terminal through which current exits the MOSFET. It is usually connected to the ground or negative side of the power supply.
These pins allow the MOSFET to function as a switch or amplifier in various electronic circuits.
Manufacturer
Application
1. Power Supply Units (PSUs): Used in converters and inverters for efficient voltage regulation.
2. Motor Drives: Utilized in controlling motors in industrial and automotive sectors.
3. Lighting Systems: Employed in LED drivers and other lighting control applications.
4. Battery Management Systems: Integrated into battery protection circuits.
5. Telecommunications: Used in RF amplifiers and switching applications.
Its robustness and efficiency make it suitable for both consumer electronics and industrial applications.