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IRLL2705TRPBF
+БОМMOSFET N-CH 55V 3.8A SOT223
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRLL2705TRPBF
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Лист данных IRLL2705TRPBF DataSheet
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Пакет SOT223
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В наличии5613
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 3.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4V, 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 3.8A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 48 nC @ 10 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 870 pF @ 25 V |
| PowerDissipation(Max) | 1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
Обзор
Description
While the exact details of the course are not available, an introductory course typically covers foundational concepts and basic principles related to its subject matter. The course likely aims to equip students with essential knowledge and skills, preparing them for more advanced studies in the field. Topics might include an overview of critical theories, methodologies, and applications pertinent to the discipline.
If it's a real course, detailed information such as course objectives, syllabus, and prerequisites would typically be provided by the institution offering it. For precise details, it's best to consult the course catalog or contact the department directly.
Equivalent
1. NXP BSS138 - Logic-Level N-channel MOSFET.
2. STMicroelectronics STN1NK60Z- Logic-Level MOSFET.
3. ON Semiconductor NTD3055-150 - Logic-Level MOSFET.
4. Fairchild Semiconductor FDN306P- Logic-Level P-channel MOSFET (complementary type).
Ensure compatibility with the specific application by checking parameters like voltage, current rating, and package type.
Features
1. Type and Configuration: It is a N-channel MOSFET.
2. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 55V and a continuous drain current (I_D) of 20A.
3. RDS(on) Performance: The on-resistance (R_DS(on)) is impressively low, around 0.048 ohms, which minimizes power loss and heat generation.
4. Package: Comes in a TO-252 (DPAK) surface-mount package, which is suitable for high-density PCB layouts.
5. Thermal Characteristics: Features excellent thermal resistance, aiding in efficient heat dissipation.
6. Switching Speed: Known for fast switching speeds, making it suitable for high-speed applications.
7. Applications: Commonly used in power management applications, DC-DC converters, motor control, and other high-efficiency power systems.
8. Reliability: Offers robustness and reliability in demanding environments.
These features make the IRLL2705TRPBF versatile and efficient for various power management needs in electronic circuits.
Pinout
The pin configuration is generally as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the device on or off.
2. Drain (D): This pin is connected to the load. It is where the main current enters the MOSFET.
3. Source (S): This is the return path to complete the circuit. It is typically connected to ground or the negative voltage source.
4. Tab (Drain): The metal tab on the package is also connected to the Drain and aids in heat dissipation.
This MOSFET is used in applications requiring high efficiency and performance, such as power supplies, motor controls, and similar electronic circuits.
Manufacturer
Application
1. Remote control systems: Used in TVs, air conditioners, and other consumer electronics for wireless control.
2. IR data transmission: Facilitates wireless data transfer in short-range applications.
3. Security systems: Integrated into IR cameras and motion sensors for surveillance.
4. Industrial automation: Used in sensors for object detection and proximity sensing in manufacturing processes.
5. Medical devices: Incorporated into equipment for non-invasive diagnostics and patient monitoring.
These applications benefit from the device's compact size, reliability, and efficiency in emitting IR light.