IRLML2402TRPBF

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IRLML2402TRPBF

+БОМ

MOSFET N-CH 20V 1.2A SOT23

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRLML2402TRPBF

  • Лист данных IRLML2402TRPBF DataSheet

  • В наличии2066

365 Дни гарантии качества

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Спецификации

Атрибут Ценность
Series HEXFET®
PartStatus Obsolete
BaseProductNumber IRLML2402
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 1.2A (Ta)
DriveVoltage(MaxRdsOn,MinRdsOn) 2.7V, 4.5V
RdsOn(Max)@Id,Vgs 250mOhm @ 930mA, 4.5V
Vgs(th)(Max)@Id 700mV @ 250µA (Min)
GateCharge(Qg)(Max)@Vgs 3.9 nC @ 4.5 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 110 pF @ 15 V
PowerDissipation(Max) 540mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage Micro3™/SOT-23
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Обзор

Description

The IRLML2402TRPBF is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for use in a variety of electronic applications, particularly where efficient power management is essential. Key features of this device include a low on-resistance, fast switching speed, and high efficiency, which make it suitable for applications such as power conversion, load switching, and DC-DC converters.
This MOSFET comes in a compact SOT-23 package, which is advantageous for space-constrained designs. The IRLML2402TRPBF is often used in consumer electronics, telecommunications, and computing systems where reliable and efficient power control is required. It supports a maximum drain-source voltage (Vds) and continuous drain current (Id) that align with moderate power handling needs.
Overall, the IRLML2402TRPBF is prized for its balance of performance, size, and efficiency, making it a solid choice for engineers and designers focused on optimizing power efficiency in compact and portable electronic devices.

Equivalent

The IRLML2402TRPBF is a N-channel MOSFET. Equivalent products include:
1. 2N7002 - A commonly used N-channel MOSFET with similar characteristics.
2. BS170 - Another N-channel MOSFET suitable for similar applications.
3. FDV301N - A compact N-channel MOSFET alternative.
4. ZXMN2A01E6 - Offers similar voltage and current specifications.
Always check the datasheets to ensure compatibility with your specific application, as parameters may vary slightly.

Features

The IRLML2402TRPBF is a small, surface-mount N-channel MOSFET manufactured by Infineon Technologies. Key features include:
1. V_DS (Drain-Source Voltage): 20V, making it suitable for low-voltage applications.
2. I_D (Continuous Drain Current): Up to 3.7A at 25°C, allowing for moderate current loads.
3. R_DS(on) (Drain-Source On-Resistance): As low as 0.034 ohms, ensuring efficient operation with minimal power loss.
4. Package Type: SOT-23, a compact form factor ideal for space-constrained designs.
5. V_GS (Gate-Source Voltage): +/- 8V, providing flexibility in gate drive voltage levels.
6. Fast Switching Speed: Enhances performance in switching applications like DC-DC converters and power management systems.
7. Low Gate Charge: Facilitates efficient drive and reduced power consumption from the gate driver.
8. Applications: Ideal for battery-powered applications, load switching, and boost converters.
These features make the IRLML2402TRPBF suitable for compact, efficient electronic designs, especially in portable devices and small power supplies.

Pinout

The IRLML2402TRPBF is a N-channel MOSFET. It typically comes in a SOT-23 package, which has a 3-pin configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, you can switch the MOSFET on or off.
2. Source (S): This pin is the source terminal of the MOSFET. It is typically connected to the ground or the negative side of the power supply in common-source configurations.
3. Drain (D): This pin is the drain terminal, where the load is connected. When the MOSFET is on, current flows from the drain to the source.
This MOSFET is often used in low-voltage applications due to its low on-resistance and fast switching capabilities.

Manufacturer

The IRLML2402TRPBF is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that produces discrete semiconductors and passive electronic components. Founded in 1962, the company has grown to become one of the largest manufacturers in its field, supplying components for a wide range of industries including automotive, industrial, computing, consumer, telecommunications, military, and aerospace. Vishay is known for producing a broad range of products, including resistors, capacitors, diodes, and integrated circuits, among others. Their components are critical in the functioning of electronic devices and systems worldwide.

Application

The IRLML2402TRPBF is a MOSFET transistor commonly used in applications requiring efficient power management. Its primary uses include DC-DC converters, battery-powered devices, and load switching in portable electronics due to its low on-resistance and fast switching capabilities. It is suitable for applications in smartphones, tablets, and other compact electronic devices where space and power efficiency are critical. The transistor is also utilized in motor control circuits, lighting systems, and general purpose switching operations in various consumer electronics and industrial equipment. Its small size makes it ideal for compact circuit designs.

Package

The IRLML2402TRPBF is packaged in a Surface Mount Device (SMD) format, specifically in a SOT-23 package. This package type is compact and designed for mounting directly onto printed circuit boards (PCBs), making it suitable for compact electronic applications.

Frequently Asked Questions


Q: What is the maximum drain current for the IRLML2402TRPBF at 25°C?
A: The continuous drain current (Id) is 1.2A at 25°C ambient temperature (Ta).


Q: What gate voltage is required to achieve minimum Rds(on)?
A: The minimum Rds(on) is specified at a drive voltage of 4.5V, with a threshold voltage as low as 700mV.


Q: Does this MOSFET support 2.7V logic-level gate drive?
A: Yes, the maximum Rds(on) is tested at Vgs = 2.7V, making it suitable for low-voltage logic-level gate drive.


Q: What is the maximum power dissipation of this SOT-23 device?
A: The maximum power dissipation is 540mW (Ta), typical for a Micro3/SOT-23 package.


Q: What is the typical gate charge (Qg) for fast switching?
A: The maximum gate charge is 3.9 nC at Vgs = 4.5V, enabling efficient high-speed switching.


Q: What is the operating temperature range for this component?
A: The junction temperature range is -55°C to +150°C, suitable for harsh environments.


Q: Is the IRLML2402TRPBF RoHS compliant and what package does it use?
A: The package is SOT-23-3 (Micro3); RoHS status is not specified in the parameters provided.


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