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IRLS4030TRLPBF
+БОМMOSFET N-CH 100V 180A D2PAK
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRLS4030TRLPBF
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Лист данных IRLS4030TRLPBF DataSheet
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В наличии3438
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 180A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.3mOhm @ 110A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 130 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 11360 pF @ 50 V |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Обзор
Description
Equivalent
Features
1. Advanced Process Technology: Utilizes the latest technology for improved performance.
2. Low On-Resistance: Offers low RDS(on), which reduces power loss and improves efficiency.
3. Fast Switching: Designed for high-speed switching, making it suitable for applications requiring rapid response times.
4. Stability: Provides stable operation over a wide range of temperatures and voltages.
5. Thermal Performance: Has excellent thermal performance, which enhances its reliability and extends lifespan in demanding environments.
6. High Current Capability: Supports high current levels, suitable for various power applications.
7. Robust Design: Built to withstand harsh conditions, providing durability and longevity.
8. Ease of Use: Comes in package forms that are easy to integrate into designs.
These features make the IRLS4030TRLPBF suitable for applications in power management, motor control, and other areas requiring efficient and reliable switching components.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is the drain terminal through which the main current flows from the source when the MOSFET is on.
3. Source (S): This pin is the source terminal, which serves as the return path for the current flowing through the drain when the MOSFET is on.
These pins are essential for the operation of the MOSFET in switching applications, providing efficient control of high power loads with lower gate drive power.