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IRS2101STRPBF
+БОМIC GATE DRVR HI/LOW SIDE 8SOIC
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRS2101STRPBF
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Лист данных IRS2101STRPBF DataSheet
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Пакет SOIC-8
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В наличии5166
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| DrivenConfiguration | High-Side or Low-Side |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 290mA, 600mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 70ns, 35ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Обзор
Description
Key features of the IRS2101STRPBF include its ability to operate with a floating channel designed for bootstrap operation up to 600 volts, providing robust high-side and low-side gate drive capability. It also includes features like under-voltage lockout for both high-side and low-side outputs and a matched propagation delay for both the high-side and low-side outputs, ensuring efficient and reliable operation. The IC is available in a variety of package options, making it suitable for a wide range of applications. Its compact size and efficient design make it a popular choice in modern power electronics systems.
Equivalent
Features
1. Floating Channel: Suitable for bootstrap operation, allowing high-side configurations up to 600V.
2. Gate Driver: Provides two output channels, one for high-side and one for low-side gate driving, capable of driving large capacitive loads.
3. Propagation Delay: Offers a fast and matched propagation delay to ensure efficient switching.
4. Under-Voltage Lockout (UVLO): Protects the gate drivers by preventing operation when the supply voltage is too low.
5. Input Logic Compatibility: Compatible with standard CMOS or LSTTL outputs.
6. Deadtime and Shoot-through Protection: Built-in protection features to prevent simultaneous conduction of high-side and low-side transistors, avoiding circuit damage.
7. Temperature Range: Designed to operate efficiently across a wide temperature range.
8. Packaging: Available in various surface-mount packages for ease of deployment within compact designs.
These features make the IRS2101STRPBF suitable for motor control and power conversion applications, where efficient and reliable MOSFET/IGBT driving is essential.
Pinout
1. VCC: Logic supply voltage.
2. IN: Logic input for controlling the high-side and low-side outputs.
3. COM: Logic ground.
4. LO: Low-side gate drive output.
5. VS: High-side floating supply return.
6. HO: High-side gate drive output.
7. VB: High-side floating supply.
8. NC: No connection.
The IRS2101STRPBF is designed to drive both high- and low-side MOSFETs or IGBTs, providing essential isolation and level shifting for these devices. This IC is particularly valued for its ruggedness and reliability in high-voltage applications.